采用瞬间蒸发技术沉积了N型Bi2 Te2.85 Se015热电薄膜,沉积的薄膜厚度在50～400nm范围之间,并在473K进行1小时的真空退火处理.利用X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)和能量散射谱(EDS)分别对薄膜的物相结构、表面形貌以及化学计量比进行表征.XRD分析结果显示,薄膜的主要衍射峰与Bi2 Te3和Bi2 Se3的标准衍射峰一致,沉积薄膜的最强衍射峰为(015),退火后,薄膜的最强衍射峰是(006).采用表面粗糙度测量仪测定薄膜厚度,薄膜的电阻率采用.四探针法在室温下进行测量,在室温下对薄膜的Seebeck系数进行表征.测试结果表明,薄膜为N型传导特性.并考察了薄膜厚度对电阻率及Seebeck系数的影响.
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