Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO

材料科学技术（英）, 2008, 24(3): 415-418.

^1, , ^2, , ^3, , ^4, , ^5, , ^6, , ^7, , ^8,

1.Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China

2.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

3.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

4.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

5.School of Information Science and Engineering, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

6.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

7.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

8.Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China

基金项目: New Century Fund for Outstanding Scholars(040634) 国家自然科学基金(50102019;50572053)

Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO

Gang JI ^1, , Shishen YAN ^2, , Yanxue CHEN ^3, , Qiang CAO ^4, , Wei XIA ^5, , Yihua LIU ^6, , Liangmo MEI ^7, , Ze ZHANG ^8,

1.Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China

2.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

3.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

4.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

5.School of Information Science and Engineering, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

6.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

7.School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

8.Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China

Keywords： Spin injection

2×(FeNi/CoZnO)/ZnO/(CoZnO/Co)×2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2×(FeNi/CoZnO) and (CoZnO/Co)×2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-inJection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

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