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  4. Zn1-xMgxO薄膜及其p型掺杂的研究进展

材料导报, 2011, 25(17): 28-32.

Zn1-xMgxO薄膜及其p型掺杂的研究进展

黄桂娟 1, , 孔春阳 2, , 秦国平 3,

1.重庆师范大学物理与电子工程学院,重庆400030

2.重庆师范大学物理与电子工程学院,重庆400030

3.重庆师范大学物理与电子工程学院,重庆400030

基金项目:   重庆市自然科学基金(AC4034)  

关键词： Zn1-xMgxO薄膜 , 宽禁带半导体材料 , p型掺杂

Recent Progress in Research of p-Type Doping of Zn1-xMgxO Thin Films

Zn1-xMgxO薄膜作为一种新型的宽带隙半导体材料,近年来一直受到广泛的关注.获得高质量稳定的p型Zn1-xMgxO薄膜是实现其光电应用的关键.概述了Zn1-xMgxO薄膜及其p型掺杂的研究现状,介绍了Zn1-xMgxO薄膜结构、光电性质及在光电领域的应用,并提出了有待进一步研究的问题.

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