{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"","authors":[{"authorName":"","id":"1b61a8f8-3f1e-48cb-91e7-e83e5c683389","originalAuthorName":""},{"authorName":"","id":"d814c249-c9b6-41b7-9111-109bbb285ff2","originalAuthorName":""}],"doi":"","fpage":"799","id":"a7a3a090-96cf-4571-b797-6ea87fd0628e","issue":"9","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"c864fe86-7839-49ec-9459-e3ad4761f41b","keyword":"Y2SiO5","originalKeyword":"Y2SiO5"},{"id":"5f9efea3-9514-4ba4-8e96-c5a5fcc0418b","keyword":"多孔体","originalKeyword":"多孔体"},{"id":"7dfaa8cb-302b-4845-8a10-41f415df74e2","keyword":"陶瓷","originalKeyword":"陶瓷"},{"id":"3496577f-3461-4ce7-aad4-c7f12369e84a","keyword":"导热系数","originalKeyword":"导热系数"},{"id":"ab4d5779-d243-4b51-8c58-9f21e9c33998","keyword":"固相体积分数","originalKeyword":"固相体积分数"},{"id":"46071854-afcf-48d6-9312-bf37d4a59f59","keyword":"抗压强度","originalKeyword":"抗压强度"},{"id":"e1848282-de98-4f23-aa5d-6421e3c790f6","keyword":"孔隙率","originalKeyword":"孔隙率"},{"id":"e0f62ad6-7461-4919-975c-1624262f7642","keyword":"叔丁基","originalKeyword":"叔丁基"}],"language":"zh","publisherId":"clkxjsxb-e201209006","title":"Porous Y2SiO5 Ceramic with Low Thermal Conductivity","volume":"28","year":"2012"},{"abstractinfo":"报道了一种新的上转换发光材料X2Y2SiO5:Er, Yb并研究了Yb3+浓度和泵浦功率对样品的上转换发光特性的影响:(1)随着Yb3+浓度的增加,绿、红光发射均呈先增强后减弱的变化,但相对于绿光发射,红光发射受Yb3+浓度的影响更剧烈,并且当12%(摩尔分数)Yb3+时,可以得到很纯的红光发射;(2)上转换发光强度与泵浦功率的关系表明,双光子吸收贡献样品的上转换发射.此外,讨论了可能的上转换机制.认为随着Yb3+浓度增加,Er3+的激发态吸收、Yb3+到Er3+的能量传递和Er3+的交叉弛豫对上转换发光的作用依次逐渐加强.","authors":[{"authorName":"郑会龙","id":"af037b68-646d-4e76-b4cc-9fe8841b2d4d","originalAuthorName":"郑会龙"},{"authorName":"曹望和","id":"de7b8460-ea8f-4f0a-8ee1-1409b604fa1a","originalAuthorName":"曹望和"}],"doi":"","fpage":"883","id":"19a0d7db-9a46-449a-b4a5-b5cc8223e38f","issue":"6","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b1968eca-ed96-4b18-b4e2-87ad31e97f7d","keyword":"Y2SiO5","originalKeyword":"Y2SiO5"},{"id":"ab6db0de-48aa-45f5-9428-b0f950d308b3","keyword":"上转换","originalKeyword":"上转换"},{"id":"313a638e-65cb-4abe-8e33-6edad934f3e0","keyword":"稀土","originalKeyword":"稀土"}],"language":"zh","publisherId":"gncl200806002","title":"Er3+单掺与Er3+/Yb3+共掺Y2SiO5的上转换发光","volume":"39","year":"2008"},{"abstractinfo":"Porous Y2SiO5 ceramic was fabricated by freeze casting with tert-butyl alcohol as solvent. The porous Y2SiO5 ceramic possessed long straight pore structure. With decreasing solid loading from 20 to 10 vol.%, the porosity of the Y2SiO5 ceramic increased linearly from 45% to 72%, while the compressive strength declined from 23.2 to 3.1 MPa. The thermal conductivity of Y2SiO5 decreased from 1.34 W/mK for the dense bulk to 0.05 W/mK for the porous body with a porosity of 57%.","authors":[],"categoryName":"|","doi":"","fpage":"799","id":"673a9f6e-cd32-4b4c-bdfe-e441c731b8e9","issue":"9","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术(英文)"},"keywords":[{"id":"c4b0a6a7-b938-400b-9c08-80e35b06171a","keyword":"Porous ceramic;Yttrium;Thermal conductivity;Freeze casting;Y2SiO5;yttrium silicate;butyl alcohol;deposition;channels","originalKeyword":"Porous ceramic;Yttrium;Thermal conductivity;Freeze casting;Y2SiO5;yttrium silicate;butyl alcohol;deposition;channels"}],"language":"en","publisherId":"1005-0302_2012_9_4","title":"Porous Y2SiO5 Ceramic with Low Thermal Conductivity","volume":"28","year":"2012"},{"abstractinfo":"Y2SiO5 has potential applications as functional-structural ceramic and environmental/thermal barrier coating material. As an important grain-boundary phase in the sintered Si3N4, it also influences the mechanical and dielectric performances of the host material. In this paper, we present the mechanical properties of Y2SiO5 including elastic moduli, hardness, strength and fracture toughness, and try to understand the mechanical features from the viewpoint of crystal structure. Y2SiO5 has low shear modulus, low hardness, as well as high capacity for dispersing mechanical damage energy and for resisting crack penetration. Particularly, it can be machined by cemented carbides tools. The crystal structure characteristics of Y2SiO5 suggest the low-energy weakly bonded atomic planes crossed only by the easily breaking Y-O bonds as well as the rotatable rigid SiO4 tetrahedra are the origins of low shear deformation, good damage tolerance and good machinability of this material. TEM observations also demonstrate that the mechanical damage energy was dispersed in the form of the micro-cleavages, stacking faults and twins along these weakly bonded atomic planes. which allows the \"microscale-plasticity\" for Y2SiO5.","authors":[],"categoryName":"|","doi":"","fpage":"2895","id":"596ccb76-93e5-4eed-b12f-0a7fc5ea6e10","issue":"15","journal":{"abbrevTitle":"JOTECS","id":"3dcf7e6d-f543-4d34-9446-df2add7ed496","issnPpub":"0955-2219","publisherId":"JOTECS","title":"Journal of the European Ceramic Society"},"keywords":[{"id":"05cc7ebb-64e5-4bd7-bc6a-75427d637efa","keyword":"Y2SiO5;mechanical properties;damage;strength;fracture;yttrium silicate;ceramics;system;si3n4-sio2-y2o3;coatings;monazite;strength;phases","originalKeyword":"Y2SiO5;mechanical properties;damage;strength;fracture;yttrium silicate;ceramics;system;si3n4-sio2-y2o3;coatings;monazite;strength;phases"}],"language":"en","publisherId":"0955-2219_2008_15_1","title":"Mechanical properties and damage tolerance of Y2SiO5","volume":"28","year":"2008"},{"abstractinfo":"Y2SiO5 has potential applications as a high-temperature structural ceramic and environmental/thermal barrier coating. In this work, we synthesized single-phase Y2SiO5 powders utilizing a solid-liquid reaction method with LiYO2 as an additive. The reaction path of the Y2O3/SiO2/LiYO2 mixture with variation in temperatures and the role of the LiYO2 additive on preparation process were investigated in detail. The powders obtained by this method have good sinterability. Through a pressureless sintering process, almost fully dense Y2SiO5 bulk material was achieved with a very high density of 99.7% theoretical.","authors":[],"categoryName":"|","doi":"","fpage":"732","id":"2a95afdb-54af-41ec-adac-a463dc87bd5c","issue":"3","journal":{"abbrevTitle":"JOMR","id":"155c387a-c8cb-4083-85f3-6b58aeef4116","issnPpub":"0884-2914","publisherId":"JOMR","title":"Journal of Materials Research"},"keywords":[{"id":"c5a23583-5dfa-4d13-b64e-ffb21eafd2d6","keyword":"yttrium silicate;thermal-expansion;si3n4-sio2-y2o3;system","originalKeyword":"yttrium silicate;thermal-expansion;si3n4-sio2-y2o3;system"}],"language":"en","publisherId":"0884-2914_2008_3_1","title":"Effect of LiYO2 on the synthesis and pressureless sintering of Y2SiO5","volume":"23","year":"2008"},{"abstractinfo":"Understanding the mechanisms of native point defects and oxygen-vacancy diffusion in Y2SiO5 is important to evaluate its performance as environmental and thermal barrier coating (ETBC). In the present first-principles calculations, we show that oxygen vacancy is the predominant vacancy species and prefers to form on the oxygen lattice sites inside SiO4 tetrahedra instead of on the interstitial non-silicon-bonded oxygen site. The calculated defect formation energy and concentration of mono-vacancies in Y2SiO5 obviously depend on the chemical potential of each element. The results suggest that it is possible to tailor the vacancy species in Y2SiO5 by controlling the chemical environment in material synthesis. Finally, theoretical simulation revealed that the self-diffusion of oxygen vacancy has high energy barriers in Y2SiO5, which is comparable to those in SiO2 and Al2O3. The result demonstrates low oxygen permeability in Y2SiO5 and further strengthens its promising applications as ETBC material.","authors":[],"categoryName":"|","doi":"","fpage":"1093","id":"e1d75330-db09-49b2-a276-165c97c97d98","issue":"3","journal":{"abbrevTitle":"JOTACS","id":"0e2c67d6-98e8-477b-999d-ec8bc9a7c78a","issnPpub":"0002-7820","publisherId":"JOTACS","title":"Journal of the American Ceramic Society"},"keywords":[{"id":"7adadfe8-26f0-4995-9ec5-e39543445a0f","keyword":"self-diffusion;silicon-nitride;luminescence;laser;defects;simulation;deposition;beta-ga2o3;stability;sapphire","originalKeyword":"self-diffusion;silicon-nitride;luminescence;laser;defects;simulation;deposition;beta-ga2o3;stability;sapphire"}],"language":"en","publisherId":"0002-7820_2012_3_1","title":"Mechanisms of Mono-Vacancy and Oxygen Permeability in Y2SiO5 Orthosilicate Studied by First-Principles Calculations","volume":"95","year":"2012"},{"abstractinfo":"采用溶胶-凝胶法制备Li+掺杂改性的Y2SiO5:Pr3+上转换发光材料,考察了Li+掺杂对样品晶型及发光性能的影响.采用XRD,DSC-TGA,FS对所制备的材料进行表征,结果表明Li+掺入浓度在7%~ 8%(摩尔分数)之间会引起Y2SiO5晶体类型由X型转变为X2型,且Li+掺入后样品转晶型温度由950℃降至800℃;样品经800℃煅烧处理后以X1型Y2SiO5为主相,850℃煅烧处理后以X2Y2SiO5为主相;Li+掺入同时会提高Y2SiO5:Pr3+材料的上转换发光强度,Li+最佳掺杂浓度为10%,对于双掺杂pr3+,Li+:Y2SiO5体系中pr3+最佳掺杂浓度为1.2%.","authors":[{"authorName":"刘成","id":"ebd1404a-238e-4bce-88e8-24b4f67ec4df","originalAuthorName":"刘成"},{"authorName":"杨毅","id":"efb78712-c9e0-47fc-a735-29cd6155e8f4","originalAuthorName":"杨毅"},{"authorName":"韩正玉","id":"84c738d3-1498-457b-9b21-4844aba23fbd","originalAuthorName":"韩正玉"},{"authorName":"武晓雅","id":"18a4ab2c-f65d-40e3-a14e-98b2222d69fe","originalAuthorName":"武晓雅"},{"authorName":"翁景霞","id":"27502dd4-7aed-4d07-9115-1d8f570f8493","originalAuthorName":"翁景霞"},{"authorName":"林璐","id":"4827b459-30c5-4201-96e9-b3e5785e9b53","originalAuthorName":"林璐"}],"doi":"10.11785/S1000-4343.20130408","fpage":"436","id":"cfae1075-512f-45e8-bb66-baeb66449acb","issue":"4","journal":{"abbrevTitle":"ZGXTXB","coverImgSrc":"journal/img/cover/ZGXTXB.jpg","id":"86","issnPpub":"1000-4343","publisherId":"ZGXTXB","title":"中国稀土学报"},"keywords":[{"id":"b3e84e87-3b8d-4b8d-a723-c48bd1bb1994","keyword":"溶胶-凝胶法","originalKeyword":"溶胶-凝胶法"},{"id":"f93f5988-48f8-46c8-b182-9b1471eab7fe","keyword":"上转换","originalKeyword":"上转换"},{"id":"d6fa5e10-c452-47ed-bc92-922dd77c707b","keyword":"晶相转变","originalKeyword":"晶相转变"},{"id":"f9a6df08-9073-4650-940a-7ca3bf32c3ad","keyword":"锂掺杂","originalKeyword":"锂掺杂"},{"id":"d85d4c22-e07b-4ab4-a77d-a5ff08a64338","keyword":"稀土","originalKeyword":"稀土"}],"language":"zh","publisherId":"zgxtxb201304008","title":"Li+掺杂对Y2SiO5∶Pr3+上转换发光性能影响","volume":"31","year":"2013"},{"abstractinfo":"采用微乳液法合成了Y2 SiO5∶Eu3+系列荧光粉.利用XRD、扫描电镜(SEM)、光电子能谱(EDS)、荧光光谱、色坐标等研究了所制备荧光粉的结构、形貌和发光性能.光电子能谱数据验证了合成样品的离子掺杂量.荧光光谱测试表明,Y2SiO5∶Eu3监测光谱呈现200nm~ 300nm的宽带吸收峰和Eu3+的系列吸收峰.在253nm紫外光激发下,Y2SiO5∶Eu3材料的发射光谱为一个多峰谱,主峰分别为5D0→7F1(591nm)、5D0→7F2 (616nm)的发光峰.当Eu3+掺杂物质的量大于24%时,出现了浓度猝灭现象.通过色坐标图可知,当Eu3+掺杂量为24%时,荧光粉的色坐标(0.503,0.366)与标准的红光色坐标接近,表明Y2SiO5∶Eu3+是很好的近紫外光激发下的红色荧光粉.","authors":[{"authorName":"霍涌前","id":"719c88ec-c9e3-4e93-9efe-145f72915701","originalAuthorName":"霍涌前"},{"authorName":"贺亚婷","id":"21754a3d-4db8-4590-a588-2a82f8f248f5","originalAuthorName":"贺亚婷"},{"authorName":"赵乐乐","id":"04a9b0ba-3a03-4738-a0ec-cba4b88bd777","originalAuthorName":"赵乐乐"},{"authorName":"刘晓莉","id":"8bb2dbc6-a7dd-45b5-b4fd-9997e492c30c","originalAuthorName":"刘晓莉"},{"authorName":"陈小利","id":"c396e33c-f4e8-4d3d-8a86-d6545e8f86fa","originalAuthorName":"陈小利"}],"doi":"","fpage":"74","id":"cc91b084-e251-4945-8e54-8357f2c279cb","issue":"3","journal":{"abbrevTitle":"HCCLLHYYY","coverImgSrc":"journal/img/cover/HCCLLHYYY.jpg","id":"42","issnPpub":"1671-5381","publisherId":"HCCLLHYYY","title":"合成材料老化与应用"},"keywords":[{"id":"a2a73c47-cff6-4fc2-af85-e181871b3104","keyword":"Y2SiO5∶Eu3+","originalKeyword":"Y2SiO5∶Eu3+"},{"id":"7d437d38-70c3-4fee-b8ad-cc39633609b9","keyword":"发光材料","originalKeyword":"发光材料"},{"id":"d8e36367-4483-434f-85b7-f753a4d55343","keyword":"红光","originalKeyword":"红光"},{"id":"e1f1e658-18ab-4ea7-bce7-6bb214e55ae4","keyword":"微乳液法","originalKeyword":"微乳液法"}],"language":"zh","publisherId":"hccllhyyy201603018","title":"微乳液法合成Y2SiO5∶Eu3+及其发光性质研究","volume":"45","year":"2016"},{"abstractinfo":"分别利用白光灯、457.9 nm氩离子激光、二倍频YAG:Nd激光泵浦的诺丹明6G可调谐窄线宽(0.5 cm-1)染料激光作为光源,以单色仪-锁相放大器-光电倍增管-计算机数据采集系统记录光谱,测量并研究了Y2SiO5:Eu3+晶体的透射光谱、荧光光谱、激发光谱和格位选择荧光光谱.5D0→7F0,1,2,3,4跃迁,30多根谱线(总数为50根)被观察到.在该晶体中Eu3+替换Y3+离子,占据两个较低对称性的光学格位,这两个格位的5D07F0能级跃迁谱线相隔大约只有0.2 nm,在室温下有一定的光谱关联.并用X射线谱对晶体的晶格常数a, b, c和晶面角度β进行测量,测量结果显示掺杂后的晶格常数和未掺杂的Y2SiO5晶格常数基本一致.","authors":[{"authorName":"薛绍林","id":"25ef247e-ef26-4f81-8c7b-ea1f0fe5a453","originalAuthorName":"薛绍林"},{"authorName":"陈凌冰","id":"c7422470-2bf5-488d-92b3-a9dbb2580224","originalAuthorName":"陈凌冰"},{"authorName":"谢黎明","id":"296b74cd-7146-4699-a20d-7896ad2ef586","originalAuthorName":"谢黎明"},{"authorName":"李富铭","id":"e45d9a09-b0c3-4c05-8f74-ac8b64111175","originalAuthorName":"李富铭"},{"authorName":"张守都","id":"490d991b-f01e-496a-b1ed-e6ce1b5f996b","originalAuthorName":"张守都"},{"authorName":"黄浩炳","id":"6832dfe5-f538-44c4-abac-1c080f07c5e5","originalAuthorName":"黄浩炳"}],"doi":"","fpage":"369","id":"d33f7a51-5777-42da-b91f-d5e393df15a2","issue":"4","journal":{"abbrevTitle":"ZGXTXB","coverImgSrc":"journal/img/cover/ZGXTXB.jpg","id":"86","issnPpub":"1000-4343","publisherId":"ZGXTXB","title":"中国稀土学报"},"keywords":[{"id":"293fbfc2-733a-4f22-962b-a4f51beb64fb","keyword":"稀土","originalKeyword":"稀土"},{"id":"58cb159e-f33b-4ed1-b785-35898ed8a39c","keyword":"Y2SiO5:Eu3+晶体","originalKeyword":"Y2SiO5:Eu3+晶体"},{"id":"1e4c104b-d6d9-42ca-8d7c-ca2b4212e407","keyword":"激发光谱","originalKeyword":"激发光谱"},{"id":"24ef0c57-a407-445b-892d-03986fa0fcd0","keyword":"格位选择","originalKeyword":"格位选择"},{"id":"8d03beee-acb3-4354-bbb2-b0dbc4ce2bb6","keyword":"荧光光谱","originalKeyword":"荧光光谱"}],"language":"zh","publisherId":"zgxtxb199904018","title":"掺Eu3+离子Y2SiO5晶体格位选择光谱研究","volume":"17","year":"1999"},{"abstractinfo":"The g factor of Cr4-- in Y2SiO5 crystal is calculated from a completed high-order perturbation formula, in which not only the conventional contribution to the g-shift Deltag(= g - g(c)) from the crystal-field mechanism, but also the contribution from the charge-transfer mechanism (which is neglected in the crystal-field theory) are considered. The calculated result shows good agreement with the observed value. It is found that the calculated Deltag due to the charge-transfer mechanism is opposite in sign and about 38% in magnitude, compared with that due to the crystal-field mechanism. So, in the studies of the g factor for a 3d(n) ion having high valence state in crystals, the contribution due to the charge-transfer mechanism should be taken into account. (C) 2004 Elsevier Ltd. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"93","id":"d9e41e09-5e37-4617-b9da-97f7e22e390c","issue":"2","journal":{"abbrevTitle":"SSC","id":"94184338-76ce-44bb-99c2-e5721f7e37e3","issnPpub":"0038-1098","publisherId":"SSC","title":"Solid State Communications"},"keywords":[{"id":"39363e49-71af-469d-8934-b90e5b14a31a","keyword":"insulators;points defects;crystal and ligand fields;electronic states;(localized);electron paramagnetic resonance;atomic screening constants;scf functions;cr4+-y2sio5;transition;pressure","originalKeyword":"insulators;points defects;crystal and ligand fields;electronic states;(localized);electron paramagnetic resonance;atomic screening constants;scf functions;cr4+-y2sio5;transition;pressure"}],"language":"en","publisherId":"0038-1098_2004_2_1","title":"Theoretical explanation of the g factor for Cr4+ in Y2SiO5 crystal","volume":"131","year":"2004"}],"totalpage":9190,"totalrecord":91894}