材料期刊网

Pb(Zr0.5Ti0.5)O-3 (PZT) and Co-doped Pb(Zr0.5Ti0.5)O-3 (PCZT) thin films have been fabricated on ITO/glass substrates by a sol-gel method combined with a rapid thermal annealing process. The films were poly-crystalline with (101)-preferred orientation. The experiments found that the addition of cobalt in PZT films greatly improved the ferroelectric properties of PZT thin films. Large remanent polarization and small coercive field were confirmed by P-E hysteresis loop measurements. The values for PZT films and PCZT films with 10 mol% Co-doped annealed at 600 degrees C were 36.5 mu C/cm(2) and 45.2 kV/cm, 58.6 mu C/cm(2) and 67.3 kV/cm, respectively. Also, dielectric properties and I-V properties of PCZT films were revealed to be sensitive to the content of cobalt. The loss factor was higher for PCZT than for PZT films. The same behavior was obtained for the leakage current density.