用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)的方法制备了磷掺杂微晶硅薄膜材料.通过Hall,Raman光谱和XRD的测试分析,研究了衬底温度和磷烷流量对掺杂薄膜组织结构和电学性能的影响.根据AFM照片分析了薄膜的表面形貌,进而推测了薄膜的内部组成.实验发现:衬底温度在250 ℃时,磷烷的加入会大大降低薄膜的晶化率.衬底温度提高到350 ℃后这种影响明显下降.薄膜的载流子浓度和电导率受薄膜晶化率影响明显,衬底温度的升高对薄膜电学性能提高有较大帮助.
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