基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性

功能材料, 2009, 40(9): 1473-1476.

基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性

宋世巍 ^1, , 秦福文 ^2, , 吴爱民 ^3, , 何欢 ^4, , 王叶安 ^5, , 姜辛 ^6, , 徐茵 ^7, , 顾彪 ^8,

1.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

2.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

3.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

4.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

5.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

6.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

7.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

8.大连理工大学,三束材料改性重点实验室,辽宁,大连,116024

基金项目: 国家自然科学基金(60476008)

关键词： (Ga,Mn)N , ECR-PEMOCVD , 室温铁磁性 , 居里温度

Characteristics of dilute magnetic semiconductor (Ga, Mn) N grown by ECR-PEMOCVD

利用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在蓝宝石(α-Al2O3)衬底上生长出Mn含量约为3%的(Ga,Mn)稀磁半导体薄膜.利用反射高能衍射(RHEED)、原子力显微镜(AFM)和X射线衍射(XRD)表征(Ga,Mn)N薄膜的表面形貌和结构特征.(Ga,Mn)N薄膜具有良好的(0002)择优取向和纤锌矿结构,表面形貌是由许多亚微米量级的晶粒按一致的取向规则堆砌而成.光致发光(PL)测量发现3.27eV附近出现施主-受主对(DAP)发光峰.超导量子干涉仪(SQUID)测量表明薄膜在室温下具有铁磁性,没有发现超顺磁性和自旋玻璃态,居里温度可达400K.

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