利用背散射衍射技术(EBSD)和XRD,研究了两段式脱碳退火工艺对取向硅钢纵截面初次再结晶的微区取向、取向差分布、特殊晶界(CSL)及高温退火试样高斯织构.分析了初次再结晶晶界特征对取向硅钢高温退火后宏观织构的影响.结果表明:初次再结晶的纵截面基体中∑3和∑5晶界使得高斯晶粒有着较高的迁移率,在高温退火时借助20°～45°的大角度晶界的界面能吞并周围[111] 〈112〉晶粒迅速长大,形成密度水平较高的高斯织构.
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