选用W10与W63两种SiC粉末,采用高、低温粘结剂配合,模压成型,750℃微波烧结,制备出体积分数为70.28%的SiC预制件,真空压力浸渗6063Al合金熔液,得到SiCp/Al复合材料.结果表明：复合材料XRD图谱中未出现明显的Al4C3界面相和SiO2杂相;致密度高;100℃时的热膨胀系数为7.239×10-6K-1;常温下热导率为160.42/W（m.K）-1;4mm×3mm×30mm规格样品的最大弯曲载荷为282N,弯曲位移为0.29mm左右;综合性能优良,是优异的电子封装材料.
The SiCp/Al composites with volume fraction 70.28% were fabricated by compression molding,750℃ Microwave Sintering and Vacuum Pressure Infiltration with W10 and W63 two kinds of SiC powder,6063 Al Alloy and high temperature adhesive combined with low temperature adhesive.The results show that there are no obvious Al4C3 interphase and impurity phase like SiO2 in the XRD pattern of the composites with high relative density and its Thermal Expansion Coefficient is 7.239×10-6K-1 at 100℃,the Thermal Conductivity is 160.42/W（m·K）-1 at normal temperature,the maximum bending load of the sample with the size of 4mm×3mm×30mm is 282N and the bending displacement is about 0.29mm.The SiCp/Al composites prepared with such excellent overall properties is good electronic packaging Material.
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