利用k·p方法研究了In0.53 Ga0.47As/InP窄禁带半导体量子阱结构中的Rashba自旋-轨道效应及其栅电压调控规律.随着栅电压Vg从-0.35 V增加到0V,电子浓度ne从0.99×1011 cm-2线性增大至9.20×1011cm-2,Rashba自旋-轨道耦合参数α从2.38×10-11 eV·m减小到0.19×10-11 eV·rn,零场自旋分裂能△0高达4.63meV.结果表明通过栅电压可以有效调控样品中的自旋-轨道耦合强度,证明该结构是制备自旋场效应晶体管(SpinFET)的理想材料.
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