在温度为60～80℃的条件下用剂量为1.72×1019n/crm2的中子对6H-SiC晶体进行了辐照,利用X射线衍射等方法观测了中子辐照引起的缺陷及其恢复.重点追踪6H-SiC的(006)、(0012)晶面的衍射峰并进行实验观测.中子辐照对晶体造成了严重的损伤,使其内部产生了大量的缺陷,在某些被测晶面甚至出现非晶化.通过等时退火,缺陷逐渐消失,晶格开始恢复,其恢复特性由退火温度决定.通过X射线衍射峰的峰高和峰型发现,在温度低于600℃时,辐照损伤几乎不变,超过600℃后,温度越高,晶格恢复现象越明显.原来经辐照呈非晶化的晶面逐渐恢复有序,(006)面衍射峰的半高宽随退火温度的升高呈线性恢复.利用此种线性规律可以制作无线传感器,从而实现对某些复杂环境的温场测试.
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