为了获得具有金字塔结构的二维亚波长结构表面，提高其高宽比，用掩模曝光光刻及反应离子刻蚀技术，以SF6和02为反应气体，在Ge衬底上制备了二维亚波长结构，用扫描电镜对刻蚀图形的形貌进行了观察，研究了功率、气压、气体流量及掩模图形对刻蚀图形的影响，结果表明：刻蚀图形腰部被优先刻蚀，形成凹陷的侧壁轮廓；02流量增大有利于在侧壁形成保护层，从而减小腰部刻蚀、增大顶部及根部刻蚀；功率及气压过大或过小均会使侧壁刻蚀较大；方形图案比圆形图案掩模更有利于刻蚀出深度较大的亚波长结构。
To achieve subwavelength structured surface with pyramid profile and improve the aspect ratio, masked lithography and reactive ion etch (RIE) were employed to fabricate subwavelength structures (SWSs) On Ge surfaces with SF6 and 02 as the reactive gases. Scanning electron microscopy (SEM) was used to characterize the morphologies of the etched patterns. Influences of 02 flow rate, gas pressure, power and the mask pattern geometry on the morphology of the etched pattern were investigated. The results show that the waist part of the patterns are preferentially etched resulting in a concave sidewall profile. The rise in 02 flow rate facilitates the formation of passivation film on the sidewall, which reduces the etch of the sidewall and increases the etch of the top part and bottom part of the pattern. Too low and too high power and gas pressure all lead to a intense etch of the waist part of the structure. Square pattern mask is preferable over circular pattern mask for deep etch of the SWSs.
参考文献
| [1] | Kanamori Y.;Hane K.;Kikuta H. .Broadband antireflection gratings for glass substrates fabricated by fast atom beam etching[J].Japanese journal of applied physics,2000(7B):L735-L737. |
| [2] | Sun CH;Jiang P;Jiang B .Broadband moth-eye antireflection coatings on silicon[J].Applied physics letters,2008(6):61112-1-61112-3-0. |
| [3] | 陈思乡,易新建,李毅.亚波长结构对10.6 μm的抗反射表面的研制[J].光学学报,2001(08):1001-1003. |
| [4] | Cardinaud C.;Tessier PY.;Peignon MC. .Plasma etching: principles, mechanisms, application to micro- and nano-technologies[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(0):72-83. |
| [5] | Rangelow IW .Reactive ion etching for high aspect ratio silicon micromachining[J].Surface & Coatings Technology,1997(1/3):140-150. |
| [6] | 杨小兵,王传敏,孙金池.工艺参数对Si深槽刻蚀的影响[J].微纳电子技术,2009(07):424-427. |
| [7] | Park WJ.;Kim JH.;Cho SM.;Yoon SG.;Suh SJ.;Yoon DH. .High aspect ratio via etching conditions for deep trench of silicon[J].Surface & Coatings Technology,2003(1/3):290-295. |
| [8] | 曹召良,卢振武,李凤有,孙强,任智斌,赵晶丽.亚波长介质光栅的制作误差分析[J].光子学报,2004(01):76-80. |
| [9] | 郑倩,刘正堂,李阳平,张淼,车兴森.RIE对Ge衬底上制备亚波长结构形貌的影响[J].半导体技术,2010(06):527-530. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%