采用磁控溅射的方法在Si基片上制备了La0.5Sr0.5MnO3-δ/Fe异质结构,并对结构的输运特性进行了分析,表明该异质结构在整个测量的温度区间内呈现半导体特性.激光辐照导致样品电阻减小,并产生瞬态光电导效应,即随着激光的关闭电阻瞬间恢复到原值.分析认为该异质结的瞬态光电导效应与La0.5Sr0.5MnO3-δ层的氧缺陷有关.
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