高温、强振、强腐蚀、高湿等恶劣环境中的监测和控制系统对MEMS (Microelectromechanical systems)提出了新的挑战.SiC具有化学惰性,高热导率及优良的力学、电学、高温性能,在MEMS技术中备受青睐,成为SiMEMS体系极具竞争力的替代材料.综述了关于立方相碳化硅(3C-SiC)薄膜的化学气相沉积(CVD)制备方法,介绍了其力学、电学性能的最新研究进展,最后举例说明了3C-SiC薄膜在MEMS器件中应用的研究现状.
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