材料科学技术（英）,
2011, 27(6): 507-512.
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1.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
3.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
4.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
5.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
6.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
7.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
8.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
9.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
基金项目:
the National High Technology R&D Program of China(2009AA03Z405;2009AA03Z417)
the National Basic Research Program of China(2010CB327600)
New Century Excellent Talents in University(NCET-08-0736)
Chinese Universities Scientific Fund(BUPT2009RC0409;BUPT2009RC0410)
the Programme of Introducing Talent of Discipline to Universities of China(B07005)
Realizing Zinc Blende GaAs/A1GaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature
Jingwei Guo
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, Hui Huang
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, Xiaomin Ren
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, Xin Yan
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, Shiwei Cai
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, Wei Wang
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, Yongqing Huang
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, Qi Wang
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, Xia Zhang
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1.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
3.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
4.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
5.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
6.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
7.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
8.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
9.Key Laboratory of Information Photonics & Optical Communications Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
Keywords：
Nanowire
Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism. It was found that radial growth can be enhanced by increasing the growth temperature. The growth of radial heterostructure can be realized at temperature higher than 500℃, while the growth temperature of axial heterostructure is lower than 440℃. The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.
参考文献
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