欢迎登录材料期刊网

材料期刊网

高级检索

本文对工业用泡生法制备蓝宝石单晶炉热场建立了二维稳态全局及局部数值模型.基于全局模拟结果,比较分析了不同热内边界条件的选取对局部核心区域热场及流场分布的影响.结果表明,基于全局/局部耦合算法的计算方案是可行的,当辐射-对流边界选取第二类边界、辐射-导热边界选取第一类边界、导热-导热边界选取第一类或第二类边界时,局部模拟结果的准确性最高,且局部网格划分与全局相应区域网格划分不一致时,对模拟结果几乎无影响.

参考文献

[1] Demina, SE;Bystrova, EN;Postoov, VS;Eskov, EV;Nikolenko, MV;Marshanin, DA;Yuferev, VS;Kalaev, VV .Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method[J].Journal of Crystal Growth,2008(7/9):1443-1447.
[2] S.E. Demina;E.N. Bystrova;M.A. Lukanina;V.M. Mamedov;V.S. Yuferev;E.V. Eskov;M.V. Nikolenko;V.S. Postolov;V.V. Kalaev .Numerical analysis of sapphire crystal growth by the Kyropoulos technique[J].Optical materials,2007(1):62-65.
[3] Mokhtari, F.;Bouabdallah, A.;Merah, A.;Zizi, M.;Hanchi, S.;Alemany, A. .Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,2010(6):573-582.
[4] Jyh-Chen Chen;Chung-Wei Lu .Influence of the crucible geometry on the shape of the melt-crystal interface during growth of sapphire crystal using a heat exchanger method[J].Journal of Crystal Growth,2004(1/3):239-245.
[5] W.J. Lee;Y.C.Lee;H.H. Jo;Y.H. Park .Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal[J].Journal of Crystal Growth,2011(1):248-254.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%