以双离子束溅射法在(111)硅片和玻璃上分别制得了单一γ1-Fe4N薄膜,研究了基片及基片温度对薄膜的结构和磁性能的影响.结果表明,以(111)硅片为基片,可制得无晶粒择优取向的单一γ1-Fe4N相;而以玻璃为基片,在基片温度为160℃时,则可制得具有(100)面晶粒取向的单一γ1-Fe4N相薄膜;与无晶粒择优取向的γ1-Fe4N相比较,具有(100)面晶粒取向的γ1-Fe4N相的矫顽力较低,易达到磁饱和,但二者的饱和磁化强度基本一致.
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