2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

稀土学报(英文版), 2006, 24(z1): 54-55.

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1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

2.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

3.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

4.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

5.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

6.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

基金项目: 国家高技术研究发展计划(863计划)(2001AA311080) 国家自然科学基金(60025409;50472068) Program for New Century Excellent Talents in Shangdong University

2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

Keywords： electron beam irradiation

Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

参考文献

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2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

参考文献