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利用化学溶液技术制备了具有单一白钨矿结构的SrMoO4多晶薄膜.用X射线衍射仪(XRD)分析了薄膜的晶相结构,用红外光谱(IR)对薄膜的均一性进行了表征,用原子力显微镜(AFM)对薄膜的表面形貌进行了观察.采用荧光光谱仪测试了所制SrMoO4薄膜在不同温度下的光致发光特性.研究结果表明,在276 nm的紫外光激发下,钼酸锶薄膜室温条件下显示出良好的光致发光特性,呈现宽带(~300 nm)的发光特征.另外,光致发光光谱的峰值呈现出明显的温度漂移特性,从511 nm(11 K)变化到484 nm(293 K).此外,本文还讨论了SrMoO4薄膜在闪烁材料和紫外成像薄膜材料方面的可能应用.

Polycrystalline SrMoO4 thin films with single scheelite type were prepared via chemical solution processing.The characterization of the crystal structure,surface morphologies,and the homogeneity of the thin films were carried out by means of X-ray diffraction(XRD),atomic force microscopy(APM)and infrared spectra(IR)analysis respectively.The photoluminescence properties of the SrMoO4 thin film were investigated at different temperatures.The results indicate that the SrMoO4 thin films exhibit broad(~300 nm)green emission bands at 293 K under 276 nm ultraviolet(UV)excitation.A temperature shift of the photoluminescence band maximum from 511 nm(11 K)to 484 nm(293 K)was observed.The results of present work demonstrate the potential application of SrMoO4 thin film used as scintillator and UV imaging thin film materials.

参考文献

[1] Paski E F;Blades M W .[J].Analytical Chemistry,1988,60:1224.
[2] Spassky D;Ivanov S;Kitaeva I et al.[J].Physical Status Solidi,2005,2:65.
[3] Mikhein S B;Mishin A N;Potapov A S et al.[J].Nuclear Instruments and Methods A,2002,486:295.
[4] Johnson L F;Boyd G D;Nassau K et al.[J].Physical Review,1962,126:1406.
[5] Cho W S;Yoshimura M .[J].Japanese Journal of Applied Physics,1996,35:1521.
[6] Tarte P;Liegeois-Duykaerts M .[J].Spectrochimica Acta,1972,28A:2029.
[7] Saito N;Sonoyama N;Sakata T .[J].Bulletin of the Chemical Society of Japan,1996,69:2191.
[8] Groenink J A;Hakfoort C;Blasse G .[J].Physical Status Solidi A Applied Research,1979,54:329.
[9] Reut E G .[J].Optics and Spectroscopy,1984,57:147.
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