本文利用二次阳极氧化法在p型低阻〈100)晶向的硅衬底上制备了AAO/Si,以硅基AAO为辅助模板,采用电化学沉积的方法以Zn( NO3)·6H2O和HMT( C6 H12 N4)为原料,在80℃的水浴槽中制备了ZnO纳米线结构.采用SEM,XRD和拉曼光谱等手段对ZnO/AAO/Si复合结构进行表征.SEM图表明ZnO纳米线已成功组装到AAO/Si模板里,直径约45 nm,长度约为600 nm.XRD和拉曼光谱表明ZnO具有六角纤锌矿多晶结构.光致发光(PL)谱图表明ZnO/AAO/Si复合结构在565 nm附近有较宽黄绿发射峰,在395 nm附近有微弱的紫外发射峰.场发射测试结果表明,ZnO纳米线的场增强因子的β值为2490,场增强因子很高,具有广泛的应用前景.
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