采用ECR等离子体辅助技术,融合化学气相沉积法,在450℃的相对低温条下于Si(100)衬底上生长出GaN薄膜.对样品进行了XRD、FT-IR和AFM表征,并在制备过程中采集到反应室中N_2-(CH_3)_3Ga等离子体的发射光谱.结果表明,所制备的多晶体GaN薄膜是由N_2-(CH_3)_3Ga等离子体中的活性成分通过复杂的反应生成的,其生长过程符合岛状生长机制.
Using the electron cyclotron resonance plasma technology and chemical vapor deposition method, the GaN films are grown on Si(100) substrates under a relatively low temperature of 450℃.The samples are characterized by XRD,FT-IR and AFM,the optical emission spectrum of N_2-(CH_3)_3 Ga plasma in the chamber is gathered during the preparaton.The results indicate that the multicrystal GaN films are grown through complicated reactions of active ingredients in the N_2-(CH_3)_3 Ga plasma ,and the growth process corresponds with the island growth mechnism.
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