欢迎登录材料期刊网

材料期刊网

高级检索

阐述了掺杂氧化锌粉体的导电机理,介绍了常用的制备方法并比较分析了各种方法的优缺点,指出导电氧化锌粉体制备技术中所存在的问题和可能的解决途径.

参考文献

[1] Yoshimarul Katsuhiko;Komiya Hideo;Hayashi Takao et al.[P].Eur Patent: 0597380 A1,1994.
[2] Yoshimoto;Akihiro;Yoshinaga et al.[P].US Patent:5853887,1998.
[3] Hayashi;Takao;Yoshimaru et al.[P].US Patent: 5772924,1998.
[4] Kingery W D;Bowen H K;Uhlmann D R.[M].John Wiley & Sons,1976
[5] Rost C.;Fischer C.;Lux-Steiner MC.;Konenkamp R.;Sieber I. .Semiconductor growth on porous substrates[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(0):570-573.
[6] 石康源;张绪礼;王莜珍 等.[J].功能材料,1996,27(01):61-63.
[7] 徐彭寿,孙玉明,施朝淑,徐法强,潘海斌.ZnO及其缺陷的电子结构[J].中国科学A辑,2001(04):358-365.
[8] Chris G .Van de Walle[J].Physical Review B,2001,308-310:899-903.
[9] Zheng Wei-ran;Zu Rong-dai;Zhong Lin-wang .[J].Science,2001,291:1947-1949.
[10] Hatanaka Y.;Nakamura A.;Aoki T.;Niraula M. .Excimer laser doping techniques for II-VI semiconductors[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(0):462-467.
[11] K Haga;P S Wijesena;H Watanabe .[J].Applied Surface Science,2001,169-170:504-507.
[12] TAO Shan-Wen,PENG Ding-kun,MENG Guang-Yao.Conduction Mechanism of Inorganic-Salt-Oxide Composite Electrolytes[J].无机材料学报,1999(02):203.
[13] Zhang D H;Yang T L;Wang Q P et al.[J].Materials Chemistry and Physics,2000,68:233-238.
[14] Tadatsugu Minami;Takashi Yamamoto;Toshihiro Miyata .Highly transparent and conductive rare earth-doped ZnO thin films prepared by magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):63-68.
[15] Yasunori Morinaga;Keijiro Sakuragi;Norifumi fujimura et al.[J].Journal of Crystal Growth,1997,174:691-695.
[16] 范志新,孙以材,陈玖琳.氧化物半导体透明导电薄膜的最佳掺杂含量理论计算[J].半导体学报,2001(11):1382-1386.
[17] Wang R P;Sleight A W .[J].Chemistry of Materials,1996,8:433-439.
[18] Seto T .Okuyama K[J].Journal of Soc Powder Technology,1996,33(03):187-191.
[19] Howard M Cyr;Nicholas S Nanovic;Palmerton .[P].US Patent: 3089856,1963.
[20] Makoto Muramoto;Nobuyuki Ishida;Fujio Matsushita .[P].US Patent: 4282117,1981.
[21] 袁方利;李晋林;徐业彬 等.[J].功能材料,1998,29(06):592-595.
[22] 林元华,张中太,袁方利,李晋林.ZnO导电陶瓷的制备及其性能表征[J].半导体学报,1999(10):867.
[23] 籍远明,张金仓,李喜贵.氧化锌导电陶瓷钇掺杂效应的正电子寿命谱研究[J].硅酸盐学报,2001(05):412-415.
[24] Takuya Tsuzuki;Paul G .McCormick[J].Scripta Materialia,2001,44:1731-1734.
[25] Takeda Mitsuo;Matsuda Tatsuhito .[P].US Patent: 6200680,2001.
[26] 邹海魁,陈建峰,刘润静,沈志刚.纳米CaCO3的制备、表面改性及表征[J].中国粉体技术,2001(05):15-19.
[27] Li Chun-xi;Wang Zi-gao .[J].Process Automation Instrumentation,2001,5:268-261.
[28] 廖霞,曾继军,何嘉松.超临界流体技术制备超细粒子[J].化学通报,2002(01):13-18.
[29] Frank Caruso .[J].Advanced Materials,2001,13(01):11-22.
[30] 袁方利,黄淑兰,凌远兵,李晋林.等离子法热解制备导电ZnO陶瓷粉[J].化工冶金,1998(03):212-216.
[31] Lin Yuan-hua;Tang Zi-long;Yuan Fang-li et al.[J].Journal of the American Ceramic Society,2000,83(11):2869-2871.
[32] 李晋林,黄淑兰,朱玉峰.等离子法制备超细活性氧化锌新工艺研究[J].化工冶金,1995(04):283-289.
[33] Dong L F;Cui Z L;Zhang Z K .[J].Nano-Structured Materials,1997,8(05):815-823.
[34] Tokuichi Hiroyuki;Yoshimaru Katsuhikol;Hasuo Mitsuihiko .[P].Eur Patent: 0598284 A1,1994.
[35] 陈冠荣.[M].北京:化学业出版社,1993
[36] Ludwig Lange;Jean Diether;Hans Klebe et al.[P].US Patent: 3954945,1976.
[37] Donald E .Tunison,Ⅲ,Savoy,Ⅲ[P].US Patent:4292290,1981.
[38] Helmut Mangoldl;Peer Plambeck-Fischer;Ingo Pauli et al.[P].US Patent:6063354,2000.
[39] 杨海望;李学富 .[J].化工新型材料,1995,9:1-5.
[40] Yuan Fang-li;Huang Shu-lan;Li Jin-lin .[J].Journal of Materials Science Letters,2001,20:1549-1551.
[41] 李强,高濂,栾伟玲,严东生.纳米ZnO制备工艺中电位与分散性的关系[J].无机材料学报,1999(05):813-817.
[42] 任俊,卢寿慈,沈健,喻春红,胡柏星.超细颗粒的静电抗团聚分散[J].科学通报,2000(21):2289-2292.
[43] 刘志强;李小斌;彭志宏 等.[J].化学通报(印刷版),1999,7:54-57.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%