以气固反应硫化制备的γ-La2S3粉体为原料,采用放电等离子烧结(SPS)技术制备出γ-La2S3多晶陶瓷.研究了Ba2+掺杂量对得到γ-La2S3粉体物相结构的影响,并分析了烧结温度、再硫化工艺参数对γ-La2S3多晶陶瓷微观组织结构和红外透过率的影响.结果表明:掺入Ba2有利于低温获得稳定的高温型γ-La2S3相,在nLa/nBa为5 ～15时能够得到纯相的γ-La2S3粉体.在烧结温度为1150℃,保温时间为5min时制备出的γ-La2S3陶瓷致密,无明显气孔,在CS2气氛下再硫化2.5h后,在10 ～ 14μm波段的红外峰值透过率达到42％.
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