采用提拉法生长了高质量、大尺寸、结构完整的声表面波零温度系数切向LGS晶体.XRD图谱显示,生长的晶体为单一相LGS晶体,晶格常数为a=0.816274 nm,c=0.509253 nm,密度为5.7463 g/cm3.压电常数、介电常数、热膨胀性能等与传统方向生长的晶体一致.用此方向生长的LGS晶体制作声表面波频率温度性能优化的切片,只需要垂直生长方向进行切割,可以大大简化晶体的加工工艺、提高LGS晶体的利用率,节省材料成本.
参考文献
| [1] | Morgan D P.History of SAW Devices[A].Pasadena,USA,1998:439-460. |
| [2] | White R M;Voltmer F M .Direct Piezoelectric Coupling to Surface Acoustic Waves[J].Applied Physics Letters,1965,7(12):314-316. |
| [3] | Kaminskii A A .Generation of Stimulated Nd-ion Radiation in Trigonal Accentric La3Ga5SiO14 Crystal[J].Reports of the USSR Academy of Science,1982,264(01):93-95. |
| [4] | Andreev A I;Doubvik M F .New Piezoelectric' Langasite' -La3Ga5SiO14-the Material with a Zero Frequency-temperature Coefficient of Elastic Vibrations[J].Letters to Journal Theoretical Phys,1984,10(08):487-491. |
| [5] | Bronnikova E G;Larionov I M;Isaev V A et al.Monolitic Filters and Resonators Based on New Piezoelectric Lantane Gallosilicate[J].Souv Journ Electronnay Technical,1986,2(63):83-85. |
| [6] | Naumenko N.;Solie L. .Optimal cuts of langasite, La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> for SAW devices[J].IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control,2001(2):530-537. |
| [7] | Gotalskaya A N;Drezen D I;Bezdelkin V V.Pecularities of Technology,Physical Properties and Applications of New Piezoelectric Material Langasite (La3Ga5SiO14)[A].Salt Lake City,Utah,USA,1993:339-347. |
| [8] | Shimamura K.;Kohno T.;Fukuda T.;Takeda H. .GROWTH AND CHARACTERIZATION OF LANTHANUM GALLIUM SILICATE LA3GA5SIO14 SINGLE CRYSTALS FOR PIEZOELECTRIC APPLICATIONS[J].Journal of Crystal Growth,1996(4):388-392. |
| [9] | Silvestrova I M;Bezdelkin V V;Senyushenkov P A.Present stage of La3Ga5SiO14-research[A].Salt Lake City,Utah,USA,1993:348-250. |
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