采用扫描探针显微镜(SPM),对离子束溅射自组装生长的Ge/Si量子点的电学性能进行分析.实验结果表明,施加正向偏压于圆顶形量子点上时,由于表面氧化物的生成,扫描区域的电流信号是不可恢复的.施加负向偏压时,单量子点区域的电流分布特征保持环状,且电流剖面图呈双峰结构,随着负向偏压的增大,各个电流峰顶部形状由尖锐变为截平,呈现出饱和的趋势.通过对电流值大小分布的统计,证实了Ge/Si量子点的电流传导主导机制为热电子发射.
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