高纯Sn和S粉按1∶0.41（质量分数,%）配比,均匀掺入9（质量分数,%）的高纯Zn粉,单源共蒸发沉积薄膜后再进行热处理,得到Sn2S3∶Zn薄膜。XRD分析显示,380℃,55min热处理得到简单正交晶系的纯Sn2S3薄膜。掺Zn（9（质量分数,%））的薄膜经370℃热处理15min得到的薄膜仍属简单正交晶系。掺Zn后Sn2S3薄膜的表面均匀和致密性变好,平均晶粒尺寸从未掺Zn时的35.69nm增加到58.80nm。Sn2S3薄膜的导电类型均为N型,掺Zn后薄膜的电阻率为6.05×101（Ω·cm）,比未掺杂时降低1个数量级。Sn2S3薄膜的直接光学带隙为1.85eV,本征吸收边为551nm;Sn2S3∶Zn（9%,质量分数）薄膜的光学带隙1.41eV,本征吸收边873nm发生红移,Sn2S3薄膜的光吸收系数均达到105cm-1。
Pure Sn and S power were mixed with ratio of m (Sn) : m (S) =1 : 0. 41(wt%). Then 9wt% Zn power was added and single source co-evaporation was utilized to prepare Sn2S3 : Zn thin films. The XRD results showed that after 55rain heat-treatment, undoped Sn2S3 films, with simple orthorhombic polycrystalline, was obtained. Films, with Zn (9wt%) doped, still showed simple orthorhombic polycrystalline after 15min heattreatment. The doping increased the surface uniformity and compactness, Average grain size increased from 35.69nm (undoped) to 58. 8Ohm (doped). Doped films showed N type behavior. The resistance rate of Zn (9wtY00) doped films decreased 1 magnitude order, which was 6.05 × 10 (Ω·cm). Direct optical band gap of Sn2S3 film was 1.85eV. The absorption edge was 551nm; after doping Zn (gwt%), the band gap narrowed to 1.41eV. The absorption edge was 873nm and showed red shift. The absorption coefficient was 10Scm-1.
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