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应用非晶Ni-Al薄膜作为扩散阻挡层,采用磁控溅射法和溶胶-凝胶法在Pt/TiO2/SiO2/Si(001)衬底上制备了Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt电容器结构,研究了在650~800 ℃温度范围内快速退火(RTA)工艺对电容器结构和物理性能的影响.结果表明:在外加电场为-100 kV/cm时,700 ℃和750 ℃退火样品的介电常数达到最大,分别为150和170.非晶Ni-Al薄膜的应用可以有效地降低BST薄膜的漏电流密度.650 ℃退火样品在整个测试电场范围内满足欧姆导电机制;700 ℃、750 ℃和800 ℃退火样品分别在电压低于-3.67 V、-2.65 V和-2.14 V时满足欧姆导电机制,在电压高于-3.67 V、-2.65 V和-2.14 V时满足普尔-弗兰克导电机制.

参考文献

[1] Cole MW;Ngo E;Hirsch S;Demaree JD;Zhong S;Alpay SP .The fabrication and material properties of compositionally multilayered Ba1-xSrxTiO3 thin films for realization of temperature insensitive tunable phase shifter devices[J].Journal of Applied Physics,2007(3):034104-1-034104-11-0.
[2] Andrey B. Kozyrev;Alexei D. Kanareykin;Elizaveta A. Nenasheva;Vitaly N. Osadchy;Dmitry M. Kosmin .Observation of an anomalous correlation between permittivity and tunability of a doped (Ba,Sr)TiO_(3) ferroelectric ceramic developed for microwave applications[J].Applied Physics Letters,2009(1):012908-1--012908-3-0.
[3] X. H. Zhu;B. Guigues;E. Defay;C. Dubarry;M. Aid .Thermal strain-induced dielectric anisotropy in Ba_(0.7)Sr_(0.3)TiO_(3) thin films grown on silicon-based substrates[J].Journal of Applied Physics,2009(2):024109-1-024109-5.
[4] C. G. Wu;Y. R. Li;J. Zhu;X. Z. Liu;W. L. Zhang .Great enhancement of pyroelectric properties for Ba_(0.65)Sr_(0.35)TiO_(3) films on Pt-Si substrates by inserting a self-buffered layer[J].Journal of Applied Physics,2009(4):044107-1-044107-4-0.
[5] Wang Y;Liu BT;Wei F;Yang ZM;Du J .Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate[J].Applied physics letters,2007(4):42905-1-42905-3-0.
[6] Yi Wang;Baoting Liu;Feng Wei .Effect of (Ba + Sr/Ti) ratio on the dielectric properties for highly (111) oriented (Ba,Sr)TiO_3 thin films[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2009(1/2):827-831.
[7] Pertsev NA;Dittmann R;Plonka R;Waser R .Thickness dependence of intrinsic dielectric response and apparent interfacial capacitance in ferroelectric thin films[J].Journal of Applied Physics,2007(7):74102-1-74102-9-0.
[8] Adrian Podpirka;M. W. Cole;Shriram Ramanathan .Effect of photon irradiation on structural, dielectric, and insulating properties of Ba_(0.60)Sr_(0.40)TiO_(3) thin films[J].Applied physics letters,2008(21):212906-1-212906-3-0.
[9] Weicheng Zhu;Jinrong Cheng;Shengwen Yu;Jia Gong;Zhongyan Meng .Enhanced tunable properties of Ba_(0.6)Sr_(0.4)TiO_(3) thin films grown on Pt/Ti/SiO_(2)/Si substrates using MgO buffer layers[J].Applied physics letters,2007(3):032907-1-032907-3-0.
[10] B. T. Liu;C. S. Cheng;F. Li;L. Ma;Q. X. Zhao;Z. Yan;D. Q. Wu;C. R. Li;Y. Wang;X. H. Li;X. Y. Zhang .Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si[J].Applied physics letters,2006(25):252903-1-252903-3-0.
[11] Low B L;Xu S Y;Ong C K et al.Substrate Temperature Dependence of the Texture Quality in YBCO Thin Films Fabricated by on-axis Pulsed-laser Ablation[J].Superconductor Science and Technology,1997,10:41-46.
[12] Hirano T;Ueda M;Matsui K et al.Dielectric Properties of SrTiO3 Epitaxial Film and Their Application to Measurement of Work Function of YBa2Cu3Oy Epitaxial Film[J].Japanese Journal of Applied Physics,1992,31(9B):L1345-L1347.
[13] Chiu MC;Yao HC;Yao HC;Huang CJ;Shieu FS .Improvement of dielectric properties of Ba0.6Sr0.4TiO3 thin films by MgO doping[J].Journal of Applied Physics,2007(1):14110-1-14110-8-0.
[14] Y. K. Wang;T. Y. Tseng;Pang Lin .Enhanced ferroelectric properties of Pb(Zr_(0.53)Ti_(0.47))O_(3) thin films on SrRuO_(3)/Ru/SiO_(2)/Si substrates[J].Applied physics letters,2002(20):3790-3792.
[15] 李丽,刘保亭,张新,闫小兵,郭颖楠.溶胶-凝胶法制备BiFeO3薄膜的结构及物性研究[J].人工晶体学报,2008(06):1430-1434.
[16] Khan MA;Comyn TP;Bell AJ .Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates[J].Applied physics letters,2008(7):72908-1-72908-3-0.
[17] Hao Yang;Kun Tao;Bin Chen;Xianggang Qiu;Bo Xu;Bairu Zhao .Leakage mechanism of (Ba_(0.7)Sr_(0.3))TiO_(3) thin films in the low-temperature range[J].Applied physics letters,2002(25):4817-4819.
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