TiNi形状记忆合金在充氢时形成的氢致马氏体和氢化物可使合金的K IC明显下降, 相对损失高达96%, 但其氢致马氏体对K IC相对损失的贡献仅约1.8%,而且不随氢浓度而改变. 因此氢致K IC下降几乎全部归因于氢化物.氢化物引起的相对损失和氢化物的含量(质量分数, %)有关, 当充氢电流i>15 mA/cm 2时, 在氢化物处能产生微裂纹, 但微裂纹不会使断裂韧性进一步下降.
The hydride formed in hydrogen charging TiNi shape memory alloy could decrease evidently fracture toughness K IC of the TiNi alloy and the relative loss of K IC is as high as 96%. The relative loss of K IC induced by the hydrogen induced martensite, however, is only about 1.8%, and does not change evidently with hydrogen concentration. Therefore, the decrease in fracture toughness of hydrogenated specimen is almost completely attributed to hydride. The relative loss of induced by hydrides, increases with increasing hydride content. Microcracks could be generated along the hydrides during charging at i>15 mA/cm2 and do not cause farther the decrease in K IC .
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