采用预制膜硫化法制备铜锌锡硫(CZTS)薄膜,分别在350,400,450,500,550℃进行硫化,研究了硫化温度对薄膜特性的影响.结果表明:硫化温度低于400℃时硫化反应基本上不发生,主要发生Cu6Sn5和Cu5Zn8两相中元素相互扩散的合金化过程,只有少量硫化物Sn3S4和ZnS生成；硫化温度为450℃时,合金相消失,硫化后的薄膜同时含有CZTS和SnS;硫化温度为500℃时薄膜的主要组成相为CZTS,其晶粒尺寸达2μm,但表面粗糙；硫化温度为550℃薄膜中CZTS晶粒尺寸约为2μm,表面平整.
参考文献
| [1] | K.Ito,T.Nakazawa,Electrical and optical-properties of stannitetype quaternary semiconductor thin-films,Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers,27,11(1988) |
| [2] | H.Katagiri,N.Sasaguchi,S.Hando,S.Hoshino,J.Ohashi,T.Yokota,Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors,Solar Energy Materials and Solar Cells,49,1-4(1997) |
| [3] | N.Nakayama,K.Ito,Sprayed films of stannite Cu2ZnSnS4,Applied Surface Science,92(1996) |
| [4] | W.Shockley,H.J.Queisser,Detailed balance limit of efficiency of P-N junction solar cells,Journal of Applied Physics,32,3(1961) |
| [5] | D.Barkhouse,O.Gunawan,T.Gokmen,T.K.Todorov,D.B.Mitzi,Device characteristics of a 10.1％ hydrazine-processed Cu2ZnSn (Se,S)4 solar cell,Progress in Photovoltaics,20,1(2012) |
| [6] | K.Wang,O.Gunawan,T.Todorov,B.Shin,S.J.Chey,N.A.Bojarczuk,D.Mitzi,S.Gnha,Thermally evaporated Cu2ZnSnS4 solar cells,Applied Physics Letters,97,14350814(2010) |
| [7] | Q.Guo,G.M.Ford,W.C.Yang,B.C.Walker,E.A.Stach,H.W.Hillhouse,R.Agrawal,Fabrication of 7.2％ efficient CZTSSe solar cells using CZTS nanocrystals,Journal of the American Chemical Society,132,49(2010) |
| [8] | H.Katagiri,K.Jimbo,S.Yamada,T.Kamimura,W.S.Maw,T.Fukano,T.Ito,T.Motohiro,Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique,Applied Physics Express,1,0412014(2008) |
| [9] | K.Timmo,M.Altosaar,J.Raudoja,K.Muska,M.Pilvet,M.Kauk,T.Varema,M.Danilson,O.Volobujeva,E.Mellikov,Sulfur-containing Cu2ZnSnSe4 monograin powders for solar cells,Solar Energy Materials and Solar Cells,94,11SI(2010) |
| [10] | K.Moriya,K.Tanaka,H.Uchiki,Fabrication of Cu2ZnSnS4 thinfilm solar cell prepared by pulsed laser deposition,Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers,46,9A(2007) |
| [11] | K.Tanaka,N.Moritake,H.Uchiki,Preparation of Cu2ZnSnS4 thin films by sulfurizing sol-gel deposited precursors,Solar Energy Materials and Solar Cells,91,13(2007) |
| [12] | T.Todorov,D.B.Mitzi,Direct liquid coating of chalcopyrite lightabsorbing layers for photovoltaic devices,European Journal of Inorganic Chemistry,1(2010) |
| [13] | Z.H.Zhou,Y.Y.Wang,D.Xu,Y.F.Zhang,Fabrication of Cu2ZnSnS4 Screen Printed Layers for Solar Cells,Solar Energy Materials and Solar Cells,94,12(2010) |
| [14] | A.Ennaoui,M.Lux-Steiner,A.Weber,D.Abou-Ras,I.Kotschau,H.W.Schock,R.Schurr,A.Holzing,S.Jost,R.Hock,T.Voss,J.Schulze,A.Kirbs,Cu2ZnSnS4 Thin Film Solar Cells From Electroplated Precursors:Novel Low-Cost Perspective,Thin Solid Films,517,7(2009) |
| [15] | F.Hergert,R.Hock,Predicted Formation Recations For the Solidstate Syntheses of the Semiconductor Materials Cu2SnX3 and Cu2ZnSnX4 (X=S,Se) Starting from Binary Chalcogenides,Thin Solid Films,515(2007) |
| [16] | Alfons Weber,Roland Mainz,Thomas Unold,Susan Schorr,HansWener Schock,In-situ XRD on formation reactions of Cu2ZnSnS4 thin films,Phys.Status Solidi,6,5(2009) |
| [17] | H.Araki,Y.Kubo,A.Mikaduki,K.Jimbo,W.Shwe Maw,H.Katagiri,M.Yamazaki,K.Oishi,A.Takeuchi,Preparation of Cu2ZnSnS4 Thin Films by Sulfurizing Eletroplated Precursors,Solar Energy Materials & Solar Cells,93(2009) |
| [18] | K.Woo,Y.Kim,J.Moon,A Non-Toxic,Solution-Processed,Earth Abundant Absorbing Layer for Thin-Film Solar Cells,Energy & Environmental Science,5,1 (2012) |
| [19] | K.Moriya,K.Tanaka,H.Uchiki,Characterization of Cu2ZnSnS4 Thin Films Prepared by Photo-Chemical Deposition,Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers,44,1B(2005) |
| [20] | H.Katagiri,N.Ishigaki,T.Ishida,K.Saito,Characterization of Cu2ZnSnS4 thin films prepared by vapor phase sulfurization,Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers,40,2A(2001) |
| [21] | P.A.Fernandes,P.Salome,A.F.Da Cunha,Growth and Raman scattering characterization of Cu2ZnSnS4 thin films,Thin Solid Films,517,7(2009) |
| [22] | N.Momose,M.T.Htay,T.Yudasaka,S.Igarashi,T.Seki,S.Iwano,Y.Hashimoto,K.Ito,Cu2ZnSnS4 thin film solar cells utilizing sulfurization of metallic precursor prepared by simultaneous sputtering of metal targets,Japanese Journal of Applied Physics,50,1(2011) |
| [23] | T.Tanaka,D.Kawasaki,M.Nishio,Q.X.Gu,H.Ogawal,M.Stutzmann,Fabrication of Cu2ZnSnS4 thin films by Co-evaporation,Physica Status Solidi C-Current Topics in Solid State Physics,3,8(2006) |
| [24] | P.A.Fernandes,P.Salome,A.F.Da Cunha,Study of polycrystalline Cu2ZnSnS4 films by Raman scattering,Journal of Alloys and Compounds,509,28(2011) |
| [25] | Jonathan James Scragg,Copper Zinc Tin Sulfide Thin Films for Photovoltaics:Systhesis and Characterisation by Electrochemical Methods,(Belin,Springer-Verlag Berlin Heidelberg,2009)p.97 |
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