欢迎登录材料期刊网

材料期刊网

高级检索

氟化非晶碳(a-C:F)薄膜是一种电、光学新材料.介绍了它的制备方法,对其制备工艺作了较全面的探讨;分析了该膜制备方法和工艺参数对薄膜组分及化学键结构的影响;研究了该膜的电学、光学、热学、力学等物理性质及其在相关方面的应用,并对该膜的物理性质与制备工艺参数的关联作了详细的论述;指出介电常数和热稳定性的矛盾是阻碍该膜实用化的主要原因.

参考文献

[1] Freire F L Jr;Jacobsohn L G et al.Diamond Related Materials[J].Diamond and Related Materials,2001,10:125.
[2] Endo K;Tatsumi T .[J].Applied Physics Letters,1996,68(20):2864.
[3] Yokomichi H;Masuda A .Vacuum[J].真空,2000,59:771.
[4] Endo K;Tatsumi T .[J].Journal of Applied Physics,1995,78:1370.
[5] Yokomichi H.;Amano T.;Masuda A.;Hayashi T. .Preparation of fluorinated amorphous carbon thin films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(Pt.A):641-644.
[6] Valentini L.;Braca E.;Kenny JM.;Fedosenko G.;Engemann J.;Lozzi L. Santucci S. .Nitrogen doping of fluorinated amorphous carbon thin films: structural and optical properties evolution upon thermal annealing[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):291-296.
[7] Durrant SF.;Bolivarmarinez LE.;Galvao DS.;Demoraes MAB.;Castro SGC. .STRUCTURAL AND OPTICAL PROPERTIES OF AMORPHOUS HYDROGENATED FLUORINATED CARBON FILMS PRODUCED BY PECVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):149-156.
[8] Catherine B. Labelle;Karen K. Gleason .Pulsed plasma-enhanced chemical vapor deposition from CH{sub}2F{sub}2, C{sub}2H{sub}2F{sub}4, and CHCIF{sub}2[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1999(2):445-452.
[9] Lamperti A.;Ossi PM. .Systematic study of amorphous hydrogenated and fluorinated carbon films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2003(1/4):113-120.
[10] Endo K;Shinoda K;et al 等.[J].Journal of Applied Physics,1999,86(05):2739.
[11] Limb S J;Labelle C B et al.[J].Applied Physics Letters,1996,68(20):2810.
[12] 辛煜,宁兆元,甘肇强,陆新华,方亮,程珊华.不同CHF3/CH4流量比下沉积a-C:F:H薄膜键结构的红外分析[J].物理学报,2001(12):2492-2496.
[13] 黄松,辛煜,宁兆元,程珊华,陆新华.微波输入功率引起a-C∶F薄膜交联结构的增强[J].物理学报,2002(11):2635-2639.
[14] Jeong W. Yi;Young H. Lee;Bakhtier Farouk .Low dielectric fluorinated amorphous carbon thin films grown from C{sub}6F{sub}6 and Ar plasma[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1):103-108.
[15] Catherine B Labelle;Limb S J;et al 等.[J].Journal of Applied Physics,1997,82(04):1784.
[16] Korcczynski E .[J].Solid State Technology,1999,42(05):22.
[17] Endo K;Tatsumi T .[J].Japanese Journal of Applied Physics,1997,36:1531.
[18] Kaplan S;Jansen F;Machonkin M .[J].Applied Physics Letters,1985,47(07):750.
[19] Endo K;Tatsumi T;Matsubara Y .Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics[J].Applied physics letters,1997(9):1078-1079.
[20] Jeong W. Yi;Young H. Lee;Bakhtier Farouk .Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1):97-102.
[21] Shirafuji T et al.[J].Thin Solid Films,2000,374:256.
[22] Endo K;Tatsumi T et al.[J].Japanese Journal of Applied Physics,1996,35:1348.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%