磁控溅射制备Cu-In合金薄膜,随后通过固态源硫化制备了CuInS2.采用XRD、SEM、紫外可见光分光光度计和霍尔效应测试仪分析了薄膜的特性.结果表明:硫化时间为10 min至30 min时,不同的硫化时间硫化后薄膜的成分几乎保持不变,薄膜的结晶程度随时间的增加变好,电阻率随硫化时间的增加而提高,薄膜的光学带隙位于1.42～1.55 eV之间.
参考文献
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