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Bi2Te3基热电材料由于在微电子、光电子等高技术领域具有潜在的应用前景,从而得到了人们的广泛关注.低维Bi2Te3基热电材料由于具有特殊的量子限制效应,已成为提高热电性能的有效途径.近年来,研究者非常重视Bi2Te3基热电薄膜的制备及性能研究,并做了大量相关的研究工作,许多制备方法也相继出现,并获得了高质量的Bi2Te3基热电薄膜.

参考文献

[1] Hicks L D;Dresselhaus M S .Effect of quantum-well structure on the thermoelectric figure of merit[J].Physical Review B,1993,47(19):12727.
[2] Bed Poudel;Qing Hao;Yi Ma;Yucheng Lan;Austin Minnich;Bo Yu;Xiao Yan;Dezhi Wang;Andrew Muto;Daryoosh Vashaee .High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys[J].Science,2008(5876):634-638.
[3] Sergey V Ovsyannikov;vladimir V Shchennikov;Grigoriy V Volrontsov et al.Giant improvement of thermoelectfic power factor of Bi2Te3 under pressure[J].Journal of Applied Physics,2008,104:053713.
[4] Tang X F;Xie W J;Li H et al.Preparation and thermoelectric transport properties of high-performance p-type Bi2Te3 with layered nsnostructure[J].Applied Physics Letters,2007,90:012102.
[5] Xiao Feng;Hangarter Carlos;Yoo Bongyoang et al.Recent progress in electrodeposition of thermoelectric thin films and nanostructures[J].Electrochimica Acta,2008,53:8103.
[6] Masaki Watanabe;Takuji Kita;Tomoteru Fukumura et al.High-thronghput screening for combinatorial thin-film library of thermoelectric materials[J].Journal of Combinatorial Chemistry,2008,10:175.
[7] Goncalves L M;Rocha J G;Couto C et al.Fabrication of flexible thermoelectric microcoolers using planar thin-film technologies[J].Journal of Micromechanics and Microengineering,2007,17:S168.
[8] Giani A.;Aboulfarah B.;Pascal-Delannoy F.;Foucaran A. Boyer A.;Mzerd A.;Boulouz A. .Effect of antimony concentration on the electrical and thermoelectrical properties of (Bi1-xSbx)(2)Te-3 thin films grown by metal organic chemical vapour deposition (MOCVD) technique[J].Journal of Crystal Growth,1999(1/2):91-96.
[9] Boulouz A.;Pascal-Delannoy F.;Boulouz M.;Foucaran A.;Boyer A.;Giani A. .Preparation and characterization of MOCVD bismuth telluride thin films[J].Journal of Crystal Growth,1998(3/4):336-341.
[10] Venkatasubramanian R;Colpitts T;Watko E et al.MOCVD of Bi2Te3,Sb2 Te3 and their superlattice structures for thinfilm thermoelectric applications[J].Journal of Crystal Growth,1997,170:817.
[11] Bulman G E;Siivola E;Shen B et al.Large external △T and cooling power densities in thin-film Bi2Te3-superlattice thermoelectric cooling devices[J].Applied Physics Letters,2006,89:122117.
[12] Beyer H.;Nurnus J.;Bottner H.;Lambrecht A.;Wagner E.;Bauer G. .High thermoelectric figure of merit ZT in PbTe and Bi2Te3-based superlattices by a reduction of the thermal conductivity[J].Physica, E. Low-dimensional systems & nanostructures,2002(2/4):965-968.
[13] Takahashi M;Katou Y et al.The composition and conductivity of electrodeposited Bi-Te alloy films[J].Thin Solid Films,1994,240(1-2):70.
[14] Magri P;Boulanger C;J M Lecuire .Synthesis,properties and performances of electrodeposited bismuth telluride films[J].Journal of Materials Chemistry,1996,5:773.
[15] Bu Luxia;Wang Wei;Wang Hui .Effect of the substrate on the electrodeposition of Bi2Te3-ySey thin films[J].Materials Research Bulletin,2008,43:1808.
[16] Bu Luxia;Wang Wei;Wang Hui .Electrodeposition of n-type Bi2 Te3-ySey thermoelectric thin films on stainless steel and gold substrates[J].Applied Surface Science,2007,253:3360.
[17] Colletti L P;Stickney J L .Optimization of the growth of CdTe thin films formed by electrochemical atomic layer epitaxy in an automated deposition system[J].Journal of the Electrochemical Society,1998,145:3594.
[18] Zhu W;Yang JY;Zhou DX;Mao CJ;Duan XK .Electrochemical atom-by-atom growth of highly uniform thin sheets of thermoelectric bismuth telluride via the route of ECALE[J].Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry,2008(1/2):41-48.
[19] Pulsed laser deposition of Bi_(2)Te_(3)-based thermoelectric thin films[J].Journal of Applied Physics,2003(6):3907-3918.
[20] Kim Dong-Ho;Byon Eungsun;Lee Gun-Hwan .Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering[J].Thin Solid Films,2006,510:148.
[21] 穆武第;程海峰;唐耿平 .射频磁控溅射制备Bi2Te3热电薄膜[J].材料导报,2007,21(zⅨ):316.
[22] Liao Chien-Neng;Liou Kuen-Ming;Chu Hsu-Shen .Enhancement of thermoelectric properties of sputtered Bi-Sb-Te thin films by electric current stressing[J].Applied Physics Letters,2008,93:042103.
[23] Noro H;Sato K;Kagechika H .The thermoelectric properties and crystallography of Bi-Sh-Te-Se thin films grown by ion beam sputtering[J].Journal of Applied Physics,1993,73:1252.
[24] Zou H L;Rowe D M;Min G .Growth of p-and n-type bismuth telluride thin films by co-evaporation[J].Journal of Crystal Growth,2001,222:82.
[25] Luciana W;Silva Da;Kaviany Massoud et al.Thermoelectric perforce of films in the bismuth-tellurium and antimony-tellurium systems[J].Journal of Applied Physics,2005,97:14903.
[26] Goncalves LM;Alpuim P;Min G;Rowe DM;Couto C;Correia JH .Optimization of Bi2Te3 and Sb2Te3 thin films deposited by co-evaporation on polyimide for thermoelectric applications[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2008(12):1499-1502.
[27] Volklein F;Baier V;Diliner U et al.Transport properties of flash-evaporated(Bi1-xSbx)2 Te3 films:Optimization of film properties[J].Thin Solid Films,1990,187:253.
[28] Ganesan P G;Damodara Das V .Thickness and temperature effects on electrical resistivity of(Bi0.5 Sb0.5)2Te3 thin films[J].Materials Letters,2006,60:2059.
[29] Cho Kyoung-Won;Kim Il-Ho .Thermoelectric properties of the flash-evaporated n-type Bi2Te2.4Se0.6 thin films[J].Materials Letters,2005,59:966.
[30] Takashiri M;Takiishi M;Tanaka S;Miyazaki K;Tsukamoto H .Thermoelectric properties of n-type nanocrystalline bismuth-telluride-based thin films deposited by flash evaporation[J].Journal of Applied Physics,2007(7):74301-1-74301-5-0.
[31] Duan XK;Yang JY;Xiao CJ;Zhu W .Structural and thermoelectric properties of Ag-doped Bi-2(Te0.95Se0.05)(3) thin films prepared by flash evaporation[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(19):5971-5974.
[32] 段兴凯,杨君友,朱文,肖承京.N型Bi2Te2.5Se0.5热电薄膜的电阻率与膜厚和温度的关系[J].材料科学与工程学报,2007(06):867-870.
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