首次采用溶胶-凝胶法制备了SiO2-PEDT复合溶胶和抗静电薄膜.通过扫描电镜(SEM)观察了薄膜的表面形貌;利用表面电阻仪和分光光度计对薄膜导电性能和光学性能进行了研究.结果表明:随加水量R的增加,溶胶的胶凝时间缩短,溶胶稳定性变差,最佳加水量为R=2;PEDT导电粒子在薄膜中均匀分散;当PEDT溶胶含量小于5.08%(质量分数,下同)时,薄膜表面电阻随PEDT溶胶含量增加保持在1010Ω/□,此时导电机理为电子隧道效应;当PEDT溶胶含量大于5.08%小于7.44%时,薄膜表面电阻大幅减小,由8×1010Ω/□下降为8×108Ω/□,此时导电机理转变为导电通道效应;当PEDT溶胶含量大于7.44%时,随PEDT含量的增加,表面电阻进一步降低(由8×108Ω/□减小为7.2×107Ω./□).复合薄膜的透过率随PEDT含量呈线性减小,由99.8%降低为94.2%.薄膜的结合强度随PEDT含量的增加逐渐降低.
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