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目的:研究 pH 值以及表面活性剂种类对 CMP 抛光液稳定性及抛光性能的影响。方法向硅溶胶中加入酸性或碱性 pH 值调节剂,配制不同 pH 值的 CMP 抛光液;通过添加不同类型的表面活性剂,研究表面活性剂对抛光液的稳定机理。结果硅溶胶 CMP 抛光液 pH 值为9.5时,加入非离子表面活性剂,抛光90 min 后,铝合金表面粗糙度降低了55.4%,光亮度增加了131%,抛光质量较好。结论弱碱环境下,抛光液的稳定性和抛光性能优良,非离子表面活性剂有利于 CMP 抛光液的稳定性。

Objective On the basis of preparing silicon sol polishing liquid for CMP process, the effects of pH value and surfac-tants on the reliability and properties of CMP slurry were studied. Methods Different pH values of CMP polishing liquid were con-figured through adding acidic or alkaline pH adjusting agent into the polishing liquid. The stabilizing mechanism of surfactants on the polishing solution was studied. Results When the pH of CMP solution was 9. 5, and Non-ionic surfactant was added, after 90 min, the surface roughness of polished aluminum alloy was decreased by 55. 4% , and the brightness was increased by 131% . The polishing quality of aluminum alloy surface was good. Conclusion Research showed the excellent stability and polishing perfor-mance of the polishing solution in weakly alkaline condition. Non-ionic surfactants were beneficial to the stability of CMP polishing liquid.

参考文献

[1] DIMITRAKOPOULOS C D,MASCARO D J . Organic Thin Film Transistors:A Review of Recent Advances[J].IBM Journal of Research and Development,2001,45(1):11-27.,2001.
[2] 宋晓岚,刘宏燕,杨海平,张晓伟,徐大余,邱冠周.纳米SiO2浆料中半导体硅片的化学机械抛光速率及抛光机理[J].硅酸盐学报,2008(08):1187-1194.
[3] HORN M. Antireflection Layer and Planarization for Micro-lithography[J]. Solid State Technology, 1991, 34(11):57-62.,1991.
[4] 李旭东,朱武峰,穆志韬,刘治国.LD2铝合金腐蚀行为研究[J].装备环境工程,2013(01):8-12,25.
[5] 陈珊,李国明,常万顺,陈学群.5083铝合金电化学性能影响因素研究[J].装备环境工程,2013(01):22-25.
[6] PARK S W,KIM C B,KIN S Y,et al . Design of Experimen-tal Optimization for ULSI CMP Process Application[J].Mi-croelectronic Engineering,2003,66
[7] 郭东明,康仁科,苏建修,金洙吉.超大规模集成电路制造中硅片平坦化技术的未来发展[J].机械工程学报,2003(10):100-105.
[8] 陆中,陈杨.化学机械抛光浆料研究进展[J].半导体技术,2009(12):1157-1161,1239.
[9] ZHANG L C,TANAKAT H . Atomic Scale Deformation in Silicon Monocrystals Induced by Two-body and Three-body Contact Sliding[J].Tribol Int,1998,31(8):425-433.,1998.
[10] CHEN J M,FANG Y C . Process Characterization and Mo-deling-hydrodynamic Characteristics of the Thin Fluid Film in Chemical-Mechanical Polishing[J].IEEE Trans Semi-conduct Manuf,2002,15(1):39-44.,2002.
[11] 彭进,夏琳,邹文俊.化学机械抛光液的发展现状与研究方向[J].表面技术,2012(04):95-98.
[12] 黎德育,夏国锋,郑振,王紫玉,田栋,王晨,翟文杰,李宁.铜在磷酸溶液中的电化学抛光研究[J].表面技术,2013(03):1-4,37.
[13] LIU Yu-ling,ZHANG Kai-liang . Investigation on the Final Pol-ishing Slurry and Technique of Silicon Substrate in ULSI[J].Microelectronic Engineering,2003,66:438-444.,2003.
[14] ZHAO Xiao-bing,LONG Ren-wei . Characterization of CeO2-SiO2 Nanoparticles and Their Oxide CMP Behavior[J].Mi-croelectronic Engineering,2010,87(9):1716-1720.,2010.
[15] LI Jing,LIU Yu-hong. Electrochemical Investigation of Cop-per Passivation Kinetics and Its Application to Low-pressure CMP Modeling [J]. Applied Surface Science, 2013, 265(15):764-770.,2013.
[16] NEIL B,JAN B . Effects of CMP Slurry Additives on the Ag-glomeration of Alumina Nanoparticles 1:General Aggrega-tion Rate Behavior[J].Journal of Colloid and Interface Sci-ence,2014,419
[17] UMA R K L,SHINTARO I . Role of Ionic Strength in Che-mical Mechanical Polishing of Silicon Carbide Using Silica Slurries[J].Colloids and Surfaces A:Physicochemical and Engineering Aspects,2014,445
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