以红磷、锡和四碘化锡为原料制备黑磷,并用黑磷(BP)纳米材料制作场效应管,用X射线衍射谱(XRD)和光学显微镜(OM)分析了BP样品的结构和形貌,并测试其输出特性曲线和转移特性曲线.BP样品厚度为12 nm,通过计算,其电子迁移率μe=248 cm2/Vs,电流开关比为～103.结果表明,基于BP纳米材料场效应管具有较好电子迁移率和开关比,为BP成为未来光电器件备选材料研究奠定基础.
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