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对近空间升华制备的CdTe薄膜进行了CdCl2气氛下热处理。测量了样品在室温下的交流阻抗特性,基于恒相位角元件(CPE)等效电路拟合所测量的复阻抗谱,分析了退火工艺对CdTe薄膜的晶粒体电阻、晶界电阻、弛豫时间的影响。结果表明,随退火温度的增加,晶粒电阻增大,晶界电阻减小,弛豫时间缩短。

The complex impedance spectroscopy was measured for the cadmium telluride polycrystalline thin films of as-deposited and annealed under CdCl2 atmosphere.Then the complex impedance spectroscopy was fitting with using constant phase element(CPE) equivalent circuits model,and the dependence of grain bulk resistance,grain boundary resistance and time constant τ on the annealing process was realized.The results show that,grain bulk resistance increases,grain boundary resistance and time constant τ decrease with the increased temperature.

参考文献

[1] Yanfa Yan;M. M. Al-Jassim;K. M. Jones .Passivation of double-positioning twin boundaries in CdTe[J].Journal of Applied Physics,2004(1):320-326.
[2] Durose K.;Cousins MA.;Boyle DS.;Beier J.;Bonnet D. .Grain boundaries and impurities in CdTe/CdS solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):396-404.
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