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SiN薄膜因为具有良好的减反射性质和钝化作用,已经越来越广泛地应用于多晶硅太阳电池的制造工艺中.介绍了SiN薄膜在硅太阳电池中的性质,制备方法等研究现状,同时提出了存在的问题并展望了今后的发展趋势.

参考文献

[1] [J].PV News,1998,17(02):3.
[2] 邓志杰,王雁,王荣敏.半导体材料的光伏应用现状[J].半导体技术,2000(02):7-9,13.
[3] Hezel R;SchoKrner R .[J].Journal of Applied Physics,1981,52:3076.
[4] Fukui K.;Inomata Y.;Takahashi H.;Fujii S.;Fukawa Y. Shirasawa K.;Okada K. .SURFACE AND BULK-PASSIVATED LARGE AREA MULTICRYSTALLINE SILICON SOLAR CELLS[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1997(1/4):219-228.
[5] HuKbner A;Aberle A G;Hezel R.[A].Barcelona Stephens, Bedford,1997:92.
[6] Duerinckx F.[A].,1997:259.
[7] Hussam Eldin A Elgamel .High efficiency polycrystalline silicon film solar cells[J].Solar Energy Materials and Solar Cells,1998,53:269.
[8] Einhaus R;Duerinckx F et al.Hydrogen passivation of newly developed EMC-multi-crystalline silicon[J].Materials Science and Engineering,1999,B58:81.
[9] 王阳元;关旭东;马俊如.集成电路工艺基础[M].北京:高等教育出版社,1991:253.
[10] Armin G Aberle .Overview on SiN surface passivation of crystalline silicon solar cells[J].Solar Energy Materials and Solar Cells,2001,65:239.
[11] Lauinger T;Aberle A G;Hezel R.Proceedings of the 14th European Photovoltaic Solar Energy Conference[J].Barcelona,1997:684.
[12] Spiegel M.;Bitnar B.;Hahn G.;Jooss W.;Fath P.;Willeke G. Bucher E.;Hofs HU.;Hassler C.;Zechner C. .Ribbon growth on substrate (RGS) silicon solar cells with microwave-induced remote hydrogen plasma passivation and efficiencies exceeding 11%[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1998(4):331-340.
[13] Lenkeit B.;Artuso F.;Hezel R.;Steckemetz S. .Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):317-323.
[14] Aberle A G;Lauinger T;Hezel R.Proceedings of the14th European Photovoltaic Solar Energy Conference[J].Barcelona,1997:684.
[15] Product information on SLPC-71H inline plasma CVD system[J].Shimadzu Corp Tokyo Japan,1999
[16] Erwann Fourmond et al.UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells[J].Solar Energy Materials and Solar Cells,2001,65:297.
[17] Vetter M .Surface passivation of silicon by rf magnetron-sputtered silicon nitride films[J].Thin Solid Films,1999,337:118.
[18] Guillermo Santana;Arturo Morales Acevedo .Optimization of PECVD SiN: H films for silicon solar cells[J].Solar Energy Materials and Solar Cells,2000,60:135.
[19] Jan Schmidt;Mark Kerr .Highest quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride[J].Solar Energy Materials and Solar Cells,2001,65:585.
[20] 李乃平.微电子器件工艺[M].武汉:华中理工大学出版社,1995:145.
[21] Aberle A G.Crystalline Silicon Solar Cells- Advanced Surface Passivation and AnalysisCentre for Photovoltaic Engineering[M].University of New South Wales Sydney2052 Australia ISBN 0 7334 0645 9,1999
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