利用电化学循环伏安法研究了Cu2、In3+及S2O2-在不同pH条件下的伏安特性,发现以柠檬酸为络合剂,pH=6时几种离子在-0.8V电位下的电化学还原行为相近,在此基础上采用恒电位法在ITO导电玻璃基底上制备CIS薄膜太阳能电池用的吸收层材料CuInS2半导体薄膜.为提高膜层的结晶度,选取空气、Ar、及Ar+S三种气氛对沉积的膜层进行热处理,SEM、XRD及Raman光谱结果表明,经Ar气氛中硫化热处理才可以得到结晶度好且形貌均匀致密的薄膜.Cu2+/In3+比影响薄膜的结晶生长,结果表明,随着Cu/In比的增大,薄膜以典型的黄铜矿结构为主,当沉积电位为-0.8V且Cu2+/In3=1.8时基底上得到的高质量CuInS2半导体薄膜的光学带隙是1.55 eV.
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