In this letter, film growth for amorphous Nb/Si multilayers has been studied by using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Results from XRD and XTEM show that the structures of amorphous Nb/Si multilayers deposited at room temperature and 550 degrees C are quite different. The influences of surface mobility of adstoms and interfacial reaction on interfacial roughness are discussed. (C) 1996 American Institute of Physics.
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