PVT法生长SiC过程生长界面形状对热应力的影响

人工晶体学报, 2012, 41(1): 24-27.

PVT法生长SiC过程生长界面形状对热应力的影响

杨明超 ^1, , 陈治明 ^2, , 封先锋 ^3, , 林生晃 ^4, , 李科 ^5, , 刘素娟 ^6, , 刘宗芳 ^7,

1.西安理工大学,西安710048

2.西安理工大学,西安710048

3.西安理工大学,西安710048

4.西安理工大学,西安710048

5.西安理工大学,西安710048

6.西安理工大学,西安710048

7.西安理工大学,西安710048

基金项目: 西安应用材料创新基金(XA-AM-201013)

关键词： SiC , 数值模拟 , 缺陷 , 热应力

Effect of the Growth Interface Shape on the Thermoelastic Stresses in SiC Crystal Prepared by PVT Technique

PVT法生长SiC过程中晶体内部的热应力是其位错产生的主要原因,而生长界面的形状对晶体热应力及缺陷的产生都有一定影响.本文对不同生长界面晶体的温场及应力场进行了数值分析,结果显示相对于凸出及平整界面的晶体,微凹界面晶体的轴向温差最小,同时产生缺陷的切应力Τrz及引起开裂的径向正应力σrr值都为最小.

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材料期刊网

PVT法生长SiC过程生长界面形状对热应力的影响

Effect of the Growth Interface Shape on the Thermoelastic Stresses in SiC Crystal Prepared by PVT Technique

参考文献