在不添加任何反应助剂的情况下，探索采用不同的原料体系用真空固相反应方法制备高纯度Ti3iC2;X射线衍射仪研究了合成工艺条件对粉体纯度的影响，并对其反应过程和反应机理进行了探讨。结果表明：以TiH2、硅粉和TiC粉为原料，可合成得到高纯度Ti3SiC2粉体，纯度均在90％以上，最高可达98．64％；TiH2、硅粉、TiC粉体的物质的量比为1：1．25：1．9时在1400℃时可合成纯度较高的Ti3SiC2，在1500℃时Ti3SiC2开始分解。
Different raw material system were adopted to synthesize high purity Ti3SiC4 without any reaction additives by vaecum solid reaction. The effect of synthesis conditions on powder＇s purity was studied by X-ray diffractometer and the reaction process and mechanisms were also discussed. The results show that high-purity T3SiC2 could be synthesized by taking TiH2, Si and TiC powders as raw materials, and the purity of Ti3SiC4 was all higher than 90% and the highest purity could reach to 98. 64%. The higher purity Ti3SiC2 could he synthesize at 1 400 ℃ when the ratio of TiH2, Si and TiC powders was 1 ： 1.25 ： 1.9, and the Ti3 SiC2 started to decomposed at 1 500 ℃.
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