用直流磁控溅射方法,在氮气分压为0.5Pa、不同的基底温度下,于玻璃基底上制备了Cu3N薄膜.当基底温度为100℃及以下时,温度越高薄膜的结晶程度越好.当基底温度在100℃以上时,随着基底温度的升高,薄膜的结晶程度逐渐减弱,200℃时结晶已很弱,300℃时已完全不能形成Cu3N晶体.薄膜的电阻率随基底温度的变化不大,薄膜的沉积速率随基底温度的升高在18～30 nm/min之间近似地线性增大,薄膜的显微硬度随基底温度的升高而略有降低.对基底温度为室温和100℃下制备的氮化铜薄膜进行不同温度下的真空退火,研究了它们的热稳定性.XRD测试表明,薄膜在200℃时开始出现分解,350℃时完全分解.比较在基底温度为室温和100℃下制备的样品,发现室温下制备的氮化铜薄膜比100℃下制备的氮化铜薄膜稳定.
参考文献
| [1] | Asano M;Umeda K;Tasaki A .Cu3N thin film for a new light recording media[J].Journal of Applied Physics,1990,29(10):1985. |
| [2] | Nosaka T.;Okamoto A.;Ogawa S.;Nakayama Y.;Yoshitake M. .Thermal decomposition of copper nitride thin films and dots formation by electron beam writing[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(0):358-361. |
| [3] | Terada S;Tanaka H;Kubota K .Hetero epitaxial growth of Cu3N thin films[J].Journal of Crystal Growth,1989,94:567. |
| [4] | Maruyama T;Morishita T .Copper nitride and tin nitride thin films for write-once optical recording media[J].Applied Physics Letters,1996,69(07):890. |
| [5] | Blucher J;Bang K;Glessen B C .Preparation of the metastable interstitial copper nitride,Cu4 N by DC plasma ion nitriding[J].Materials Science and Engineering A,1989,117:11. |
| [6] | 吴志国,张伟伟,白利峰,王君,阎鹏勋.纳米Cu3 N薄膜的制备与性能[J].物理学报,2005(04):1687-1692. |
| [7] | 岳光辉,闫鹏勋,刘金良.多晶氮化铜薄膜制备及性能研究[J].人工晶体学报,2005(02):344-348. |
| [8] | Monjoy S;Suchitra S .Effect of substrate temperature and annealing temperature on the structural,electrical and microstructural properties of thin Pt films by RF magnetron sputtering[J].Applied Surface Science,2006,253:2739. |
| [9] | Ghosh S.;Choudhary D.;Avasthi DK.;Ganesan V.;Shah P.;Gupta A.;Singh F. .Effect of substrate temperature on the physical properties of copper nitride films by r.f. reactive sputtering[J].Surface & Coatings Technology,2001(0):1034-1039. |
| [10] | Yue GH;Yan PX;Wang J .Study on the preparation and properties of copper nitride thin films[J].Journal of Crystal Growth,2005(3/4):464-468. |
| [11] | Du Y;Ji A L;Ma L B et al.Electrical conductivity and photoreflectance of nanocrystalline copper nitride thin films deposited at low temperature[J].Journal of Crystal Growth,2005,280:490. |
| [12] | Nosaka T;Yoshitake M;Okamotoa A et al.Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering[J].Thin Solid Films,1999,348:8. |
| [13] | Borsa D M;Boerma D O .Growth,structural and optical properties of Cu3N films[J].Surface Science,2004,548:95. |
| [14] | Shan F L;Gao Z M;Wang Y M .Microhardness evaluation of Cu-Ni multilayered films by X-ray diffraction line profile analysis[J].Thin Solid Films,1998,324:162. |
| [15] | Liu Z Q;Wang W J;Wang T M et al.Thermal stability of copper nitride films prepared by RF magnetron sputtering[J].Thin Solid Films,1998,325:55. |
| [16] | Hones P;Zakri C;Schmid P E et al.Oxidation resistance of protective coatings studied by spectroscopic ellipsometry[J].Applied Physics Letters,2000,76:3194. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%