在国际上第一次采用电子束反应蒸发法在Si(111)衬底上生长了MgxZn1-xO晶体薄膜.能量色散X射线(EDX)特征能谱及X射线衍射(XRD)分析表明薄膜呈立方结构,薄膜的晶面取向依赖于生长温度,在200℃温度下生长得到高度(200)取向的立方MgxZn1-xO薄膜,温度过高时得到多晶薄膜.对高度(200)取向的立方MgxZn1-xO薄膜的光荧光激发谱(PLE)分析表明其光学带隙为4.20eV,相对于MgO的带隙红移量为3.50eV.XRD分析还表明立方MgxZn1-xO薄膜与MgO衬底之间的晶格失配仅为0.16％.这使得高质量立方MgxZn1-xO/MgO多量子阱材料的制备成为可能.
Epitaxy of the cubic MgxZn1-xO thin films on Si (111) was achieved by the reactive electron beam evaporation
for the first time. Energy dispersive x-ray detection (EDX) and x-ray diffraction (XRD) were employed to characterize the as-grown films. The
orientation of cubic MgxZn1-xO films relies on the growth temperature and the highly (200) oriented MgxZn1-xO films are
attainable only at the optimal growth temperature of about 200℃. Photoluminescence excitation (PLE) spectroscopic measurement demonstrates
that the optical absorption band edge of the cubic MgxZn1-xO is at 4.20eV, which is 3.50eV lower than the band gap of MgO. Furthermore, XRD
measurements indicate the lattice mismatch between cubic MgxZn1-xO and MgO is only 0.16%. The successful growth of high quality MgxZn1-xO
renders the fabrication of cubic phase MgxZn1-xO/MgO multiple quantum wells possible.
参考文献
| [1] | |
| [2] | Koch M H, Timbrell P Y, Lamb R N. Semicond. Sci. & |
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