采用射频磁控共溅射法在硅基片上沉积了Ge掺杂ZnO薄膜,所制备的样品具有强蓝光发射和弱黄光发射.通过分析Ge掺入量和退火温度对发光谱的影响,并与相同条件下所沉积的纯ZnO薄膜的发光特性进行比较,结果表明,蓝光发射可能与Ge杂质形成的施主能级有关,弱黄峰可能源于Ge替代Zn空位形成的杂质能级到价带的跃迁复合.
参考文献
| [1] | Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T .Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,1997(17):2230-2232. |
| [2] | Qiu DJ.;Wu HZ.;Feng AM.;Lao YF.;Chen NB.;Xu TN. .Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2004(1/4):263-268. |
| [3] | Zhang X T;Liu Y C;Ma J G et al.Room-temperature blue luminescence from ZnO:Er thin films[J].Thin Solid Films,2002,413:257. |
| [4] | Zheng TH;Li ZQ;Chen JK;Shen K;Sun K .Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(24):8482-8486. |
| [5] | Yu Y S;Kim G Y;Min B H et al.Optical characteristics of Ge doped ZnO compound[J].Journal of the European Ceramic Society,2004,24:1865. |
| [6] | Jiang M F;Wang Z L;Ning Z Y .Study of sturcural and optical properties of Ge doped ZnO films[J].Thin Solid Films,2009,517:6717. |
| [7] | Lyu SC.;Zhang Y.;Ruh H.;Lee HJ.;Shim HW.;Suh EK.;Lee CJ. .Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires[J].Chemical Physics Letters,2002(1/2):134-138. |
| [8] | 李伙全,宁兆元,程珊华,江美福.射频磁控溅射沉积的ZnO薄膜的光致发光中心与漂移[J].物理学报,2004(03):867-870. |
| [9] | U. Pal;J. Garcia Serrano;N. Koshizaki .Photoluminescence in Si/ZnO nanocomposites[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2004(1):24-29. |
| [10] | Shan F K;Kim B I;Liu G X et al.Blue shift of near band edge emission in Mg doped ZnO films and aging[J].APPLIED PHYSICS,2004,95:4772. |
| [11] | Ning ZY.;Ge SB.;Chao Y.;Gang ZQ.;Zhang YX.;Liu ZG.;Cheng SH. .PREPARATION AND CHARACTERIZATION OF ZNO-AL FILMS BY PULSED LASER DEPOSITION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):50-53. |
| [12] | Park KC.;Kim KH.;Ma DY. .THE PHYSICAL PROPERTIES OF AL-DOPED ZINC OXIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):201-209. |
| [13] | Hu J;Gordon R G .Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethylzinc,water,and triethyl gallium[J].Journal of Applied Physics,1992,72:5381. |
| [14] | Xue ZY.;Zhang DH.;Wang QP.;Wang JH. .The blue photoluminescence emitted from ZnO films deposited on glass substrate by rf magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):126-129. |
| [15] | Wang Q P;Zhang D H;Ma H L et al.Photoluminescence of ZnO films prepared by r.f.sputtering on different substrates[J].Applied Surface Science,2003,220:12. |
| [16] | Xu X L;Lau S P;Chen J S et al.Polycrystalline ZnO thin films on Si (100) deposited by ilhered cathodic vacuum arc[J].Journal of Crystal Growth,2001,223:201. |
| [17] | Photoluminescence of polycrystalline ZnO under different annealing conditions[J].Journal of Applied Physics,2003(9):5787-5790. |
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