在室温、10 Pa氩气环境气体中,采用脉冲激光烧蚀技术,在以烧蚀点为圆心、半径为2 cm的玻璃弧形支架的不同角度处放置衬底,沉积了纳米Si晶薄膜.通过扫描电子显微镜、拉曼散射仪对制备样品的形貌和特性进行分析.结果表明:纳米Si晶粒以羽辉轴线为轴呈对称分布,在轴线处平均尺寸最大,随着衬底同轴线夹角的增加,晶粒尺寸逐渐减小.结合朗缪尔探针对空间不同位置羽辉中Si离子密度和热运动温度分布的诊断情况,从晶粒生长过程的角度对其尺寸随空间位置变化的结果进行了研究,得到了晶粒尺寸正比于烧蚀粒子密度和热运动温度的结论.
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