采用中频反应磁控溅射技术,以高纯Ti(99.99％)为靶材,以高纯氮气(99.99％)为反应气体,在铝合金基片上沉积Ti/TiN复合纳米膜层.通过XRD、SEM、EDS等分析Ti/TiN复合纳米膜层微观组织和物相结构,研究基片负偏压对Ti/TiN复合纳米薄膜择优取向生长的影响.研究表明,将片加上-150 V负偏压时,Ti/TiN薄膜优先沿(111)面生长;将基片加上-200 V负偏压时,Ti/TiN薄膜优先沿(220)面生长;将基片加上-350 V负偏压时,Ti/TiN薄膜优先沿(200)面生长.继续增大基片负偏压时,由于薄膜中Ar离子浓度大幅增长,高能离子长时间轰击破坏晶粒取向性,使薄膜呈无择优取向.
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