在电弧离子镀弧靶上加挡板,分别在挡板屏蔽区内、外用Si(100)和玻璃片作基片沉积出AlN薄膜.用扫描电镜(SEM),X射线衍射仪(XRD),X射线光电子能谱分析仪(XPS)和紫外可见光分光计对AIN薄膜的性能进行了研究.结果表明,在挡板屏蔽区内沉积出的AIN薄膜呈(002)择优取向,无大颗粒污染,在300～1000nm波长范围内透明;在挡板屏蔽区外的AIN薄膜呈(100)择优取向,含有A1污染颗粒,不透明.用电弧离子镀法沉积AIN,样品不需要额外加热就能获得晶态AIN薄膜,样品的温度升高来源于粒子对基底的轰击.
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