研究了以一种碳纳米管为填充物的高分子导电膜的制备及导电膜的组份和处理条件对其导电性的影响.实验发现,当碳纳米管与环氧树脂的质量配比为1:30时,导电膜的电导率开始明显提高,当质量配比为1:36时,该导电膜的压阻效应就非常明显.
参考文献
| [1] | Shirakawa H;Macdiarmid A G;Heeger A F J .Synthesis of electroactive molecules based on benzodioxins and tetrathiafulvalenes[J].Chemical Communications,1977,3:578. |
| [2] | Iijima S .Helical microtubes of graphitic carbon[J].Nature,1991,358:56. |
| [3] | Sinnott S.B.;Andrews R. .Model of carbon nanotube growth through chemical vapor deposition[J].Chemical Physics Letters,1999(1/2):25-30. |
| [4] | 黄昆;谢希德.半导体物理学[M].北京:科学出版社,1958 |
| [5] | K.Seeger;徐乐;钱建业.半导体物理学[M].北京:人民教育出版社,1980:19,50,123,271,340. |
| [6] | 叶良修.半导体物理学[M].北京:高等教育出版社,1983 |
| [7] | Taher I;Aslam M;Tamor M A et al.Piezoresistive micro sensors using p-type CVD diamond films[J].Sensors and Actuators A:Physical,1994,45:35. |
| [8] | Dorsch O;Holvmer K;Werner M et al.Piezoresistive effect of boron-doped diamond thin films[J].Diamond and Related Materials,1993,2:1096. |
| [9] | Yoshikama M;Katagiri G;Ishida H et al.Characterization of crystalline of the diamond films by Raman spectroscopy[J].Applied Physics Letters,1989,55(25):2608. |
| [10] | Wang W L;Liao K J .Piezoresistive effect of diamond films produced by de plasma CVD[J].Chinese Phys Lett,1994,11(09):589. |
| [11] | Wang WL.;Taube K.;Klages CP.;Jiang X. .PIEZORESISTIVITY OF POLYCRYSTALLINE P-TYPE DIAMOND FILMS OF VARIOUS DOPING LEVELS AT DIFFERENT TEMPERATURES[J].Journal of Applied Physics,1997(2):729-732. |
| [12] | 王万录,张振刚,廖克俊,吴彬,张世斌,廖梅勇.定向局部异质外延生长的p型金刚石膜压阻效应的研究[J].半导体学报,1997(06):474. |
| [13] | Wang W L;Liao K J .Piezoresistivity of p-type heteroepitaxial diamond films on(Si100)[J].Diamond and Related Materials,1998,7:528. |
| [14] | Zhou O;Fleming R M;Murphy D W et al.Defects in carbon nanostructures[J].Science,1994,263:2511. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%