采用射频磁控溅射工艺,制备了一系列(Fe40Co40B20)1-xNix(x为原子分数)磁性薄膜,研究了样品在微波频段下的电磁性能.结果表明,通过调整Ni含量及合适的工艺参数可有效调控薄膜的微结构和电磁性能,且在(Fe40Co40B20)0.91Ni9薄膜样品中获得了优良的微波性能和高电阻率.其饱和磁化强度4πMs达到2.21 T,复磁导率实部μ1在0.5～3 GHz频率范围内大于195,铁磁共振频率fFMR达到3.16 GHz,电阻率也达到276μΩ·cm.该薄膜可应用于GHz频段下电磁器件的设计中.
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