采用温度梯度法,通过MW-ECR射频磁控溅射在硅片基底上制备了六方和立方混合的氮化硼薄膜.研究了薄膜的键结构,化学成分和力学性能.结果显示,对于氮化硼立方相的出现存在温度阈值,薄膜的硬度随沉积温度提高而提高.相对于传统薄膜制备方法,温度梯度方法具有更高的效率.
参考文献
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